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BDW46AU

Description
15A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size382KB,62 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BDW46AU Overview

15A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BDW46AU Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)15 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)250
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)4 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc.
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) — BDW46
VCEO(sus) =
100 Vdc (min.) — BDW42/BDW47
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
VCE(sat) =
3.0 Vdc (max.) @ IC = 10.0 Adc
Monolithic Construction with Built–In Base Emitter Shunt resistors
TO–220AB Compact Package
BDW42*
BDW46
BDW47*
*Motorola Preferred Device
NPN
PNP
MAXIMUM RATINGS
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
85 WATTS
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
VCEO
VCB
VEB
IC
IB
BDW46
80
80
BDW42
BDW47
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
15
Collector Current — Continuous
Base Current
0.5
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
85
0.68
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 150
_
C
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θJC
Max
Unit
Thermal Resistance, Junction to Case
1.47
_
C/W
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
3–212
Motorola Bipolar Power Transistor Device Data
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