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ZTX604

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size70KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX604 Overview

RF SMALL SIGNAL TRANSISTOR

ZTX604 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)2000
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max1.5 V
ZTX604
ZTX605
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ZTX604
ZTX605
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
CONDITIONS.
MAX.
PARAMETER
SYMBOL
ZTX604
ZTX605
MIN.
MAX.
MIN.
ISSUE 1 – MARCH 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
C
B
E
Static Forward
h
FE
Current Transfer Ratio
100K
MHz
2K
5K
2K
0.5K
I
C
=100mA, V
CE
=10V
f=20MHz
100K
2K
5K
2K
0.5K
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Transition Frequency
f
T
150
150
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off
Current
I
CBO
ZTX604
MIN.
Collector-Base
Breakdown Voltage
120
100
10
Emitter-Base
Breakdown Voltage
0.01
10
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
0.1
10
1.0
1.5
1.8
1.7
3-212
MAX.
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX605
MIN.
140
120
10
MAX.
V
V
V
SYMBOL
ZTX604
120
100
10
4
1
1
5.7
E-Line
TO92 Compatible
ZTX605
140
120
UNIT
V
V
V
A
A
W
mW/ °C
-55 to +200
UNIT
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
0.01
10
0.1
°C
Input Capacitance
pF
µ
s
µ
s
C
ibo
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
90 Typical
pF
V
EB
=500mV, f=1MHz
Output Capacitance
C
obo
15 Typical
Switching Times
t
on
0.5 Typical
t
off
1.6 Typical
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
R
5
= 20KΩ
1.0
R
5
= 1MΩ
0.8 R
5
=
R
5
= 100KΩ
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
0.6
0.4
ZTX604
ZTX605
100
200
DC Conditions
0.2
Collector-Emitter
Breakdown Voltage
Maximum Power Dissipation (W)
0
1
10
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
V
CB
=100V
V
CB
=120V
V
CB
=100V,
T
amb
=100°C
V
CB
=120V,
T
amb
=100°C
V
EB
=8V
10
1.0
1.5
1.8
1.7
V
CES
=100V
V
CES
=120V
V
V
V
V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
IC=1A, V
CE
=5V*
The maximum permissible operational temperature can be obtained from this graph using the
following equation
Power
(max ) −
Power
(
act
)
+25°
C
T
amb
(
max
)
=
0.0057
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
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