BC807-25LT1 datasheet, PDF - EEWORLD Datasheet

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BC807-25LT1: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size232KB，3 Pages; ManufacturerRectron; Environmental Compliance

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BC807-25LT1 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC807-25LT1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rectron
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BC807-16LT1

BC807-25LT1

BC807-40LT1

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR (PNP)

FEATURES

* Ideally suited for automatic insertion

* Epitaxial planar die construction

* Complementary NPN type available(BC817)

SOT-23

COLLECTOR

MECHANICAL DATA

BASE

Case: Molded plastic

Epoxy: UL 94V-O rate flame retardant

Lead: MIL-STD-202E method 208C guaranteed

Mounting position: Any

Weight: 0.008 gram

EMITTER

0.055(1.40)

0.047(1.20)

0.006(0.15)

0.003(0.08)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

0.020(0.50)

0.012(0.30)

0.100(2.55)

0.089(2.25)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS

( @ T

= 25 C unless otherwise noted )

CHARACTERISTICS

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-continuous

Collector dissipation

Junction and storage temperature

SYMBOL

CBO

CEO

EBO

stg

VALUE

-50

-45

-5

-0.5

0.3

-55 -150

UNITS

ELECTRICAL CHARACTERISTICS

( @ T

= 25

C unless otherwise noted )

CHARACTERISTICS

Collector-base breakdown voltage (I

= -10mA, I

=0)

Collector-emitter breakdown voltage (I

= -10mA, I

=0)

Emitter-base breakdown voltage (I

= -1mA, I

=0)

Collector cut-off current (V

= -45V, I

=0)

Collector cut-off current (V

= -40V, I

=0)

Emitter cut-off current (V

= -4V, I

=0)

DC current gain (V

= -1V, I

= -100mA)

Collector-emitter saturation voltage (I

= -500mA, I

= -50mA)

Base-emitter saturation voltage (I

= -500mA, I

= -50mA)

Transition frequency (V

= -5V, I

= -10mA, f= 100MH

)

MARKING:

16LT1--5A;

SYMBOL

CBO

CEO

EBO

CBO

CEO

EBO

FE(1)

CE(sat)

BE(sat)

100

16LT1

25LT1

MIN

-50

-45

-5

160

100

40LT1--5C

2007-3

250

40LT1

16LT1

25LT1

MAX

-0.1

-0.2

-0.1

400

-0.7

-1.2

600

40LT1

UNITS

25LT1--5B;

BC807-25LT1 Related Products

	BC807-25LT1	BC807-16LT1	BC807-40LT1
Description	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	Rectron	Rectron	Rectron
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	100	250
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	265	265	265
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz

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