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ZTX554

Description
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
CategoryDiscrete semiconductor    The transistor   
File Size52KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZTX554 Overview

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

ZTX554 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage125 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment2 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V
ZTX554
ZTX555
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX554
ZTX555
TYPICAL CHARACTERISTICS
ZTX554/55-2
I
B1
=I
B2
=I
C
/10
-0.8
ISSUE 1 – MARCH 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
C
B
I
C
/I
B
=10
ts
800
tf
td
ns
400 100
600
-0.6
tr ts
ns µs
500 5
tf
ns
1000
400
4
E
-0.4
300
3
V
CE(sat)
- (Volts)
Switching time
-0.2
td
200
tr
0
-0.1
-1
0
50
200
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
= 25°C
derate above 25°C
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
V
CBO
SYMBOL
ZTX554
-140
-125
-5
-2
-1
1
5.7
E-Line
TO92 Compatible
ZTX555
-160
-150
UNIT
V
V
V
A
A
W
mW/ °C
-55 to +200
°C
100
1
0
-0.0001
-0.001
-0.01
-0.1
-1
0
0
-0.01
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Switching Speeds
100
-1.4
80
I
C
/I
B
=10
-1.2
Operating and Storage Temperature Range
60
V
CE
=-10V
-1.0
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX554
MIN.
Collector-Base
Breakdown Voltage
-0.001
-0.01
-0.1
-1
40
ZTX555
MAX
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
-140
-125
-5
MIN.
-160
-150
-5
MAX
UNIT
CONDITIONS.
-0.8
V
BE(sat)
- (Volts)
20
h
FE
- Normalised Gain (%)
-0.6
-0.0001
V
V
V
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
-0.1
0
-0.0001
-0.001
-0.01
-0.1
1
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
1.0
-1.4
-0.1
-0.1
-0.3
-1
Base-Emitter
Saturation Voltage
V
BE(on)
-1
Base-Emitter
Turn-on Voltage
-0.1
-0.3
-1
-1
µ
A
µ
A
µ
A
V
CB
=-120V
V
CB
=-140V
V
EB
=-4V
V
V
V
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
IC=-100mA, V
CE
=-10V*
-1.2
V
CE
=-10V
0.1
-1.0
V
BE
- (Volts)
-0.8
0.01
D.C.
1s
100ms
10ms
1.0ms
100µs
I
C
- Collector Current (Amps)
-0.6
ZTX554
-0.0001
ZTX555
-0.001
10
-0.01
-0.1
-1
0.001
100
1000
1
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
50
50
100
300
50
50
100
10
3-198
300
MHz
10
pF
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
BE(on)
v I
C
Safe Operating Area
3-199

ZTX554 Related Products

ZTX554 ZTX555
Description PNP SILICON PLANAR MEDIUM POWER TRANSISTORS PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
Is it Rohs certified? incompatible conform to
Maker Zetex Semiconductors Zetex Semiconductors
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code unknow not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-based maximum capacity 10 pF 10 pF
Collector-emitter maximum voltage 125 V 150 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Maximum power consumption environment 2 W 2 W
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.3 V 0.3 V
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