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ZTX551

Description
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size68KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX551 Overview

1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

ZTX551 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionE-LINE PACKAGE-3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-92
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power consumption environment2 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.35 V
ZTX550
ZTX551
ZTX550
ZTX551
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
TYPICAL CHARACTERISTICS
100
-0.8
ISSUE 1 – MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
C
B
E
80
ZTX551
-0.6
ZTX550
60
-0.4
ZTX551
I
C
/I
B
=10
40
V
CE(sat)
- (Volts)
0
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
h
FE
- Normalised Gain (%)
-0.2
20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
I
C
-
Collector Current (Amps)
E-Line
TO92 Compatible
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX550 ZTX551
-60
-45
-5
-2
-1
1
5.7
-55 to +200
-80
-60
UNIT
V
V
V
A
A
W
mW/ °C
°C
-0.001
I
C
-
Collector Current (Amps)
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
V
CE(sat)
v I
C
h
FE
v I
C
-1.4
-1.0
-1.2
-0.9
V
BE
- (Volts)
-1.0
-0.8
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
ZTX550
MIN.
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
Static Forward
Current Transfer
Ratio
Transition
Frequency
f
T
100
15
150
-60
-45
-5
Emitter-Base
Breakdown Voltage
-0.1
-0.1
-0.25
-0.01
-0.1
-1
-10
ZTX551
MAX. MIN.
-80
-60
-5
-0.1
-0.1
-0.35
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-45V
V
CB
=-60V
V
EB
=-4V
V
I
C
=-150mA,
I
B
=-15mA*
-1.1
300
50
10
150
-1.1
150
MHz
V
I
C
=-150mA,
I
B
=-15mA*
V
BE(sat)
- (Volts)
-0.8
-0.7
-0.6
-0.01
-0.1
-0.6
-1
-10
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(on)
v I
C
V
BE(sat)
v I
C
10
Single Pulse Test at T
amb
=25°C
ZTX550
1
I
C
- Collector Current (Amps)
0.1
D.C.
1s
100ms
10ms
1.0ms
0.3ms
0.1ms
0.01
0.1
1
10
ZTX551
100
V
CE
-
Collector Voltage (Volts)
I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
3-194
Safe Operating Area
3-195

ZTX551 Related Products

ZTX551 ZTX550
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
package instruction E-LINE PACKAGE-3 IN-LINE, R-PSIP-W3
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-based maximum capacity 25 pF 25 pF
Collector-emitter maximum voltage 60 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 10 15
JEDEC-95 code TO-92 TO-92
JESD-30 code R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power consumption environment 2 W 2 W
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
VCEsat-Max 0.35 V 0.25 V
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