ZTX576
ZTX576
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
TYPICAL CHARACTERISTICS
I
B1
=I
B2
=I
C
/10
-0.8
ts
800
tf
td
nS
400 100
200
tr
0
-0.1
-1
0
50
600
tf
nS
1000
ISSUE 1 APRIL 94
FEATURES
* 200 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
C
B
I
C
/I
B
=10
-0.6
tr ts
nS µS
500 5
400
4
E
-0.4
300
3
200
td
2
V
CE(sat)
- (Volts)
Switching time
-0.2
E-Line
TO92 Compatible
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-200
-200
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
100
1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
0
0
-0.0001
-0.001
-0.01
-0.1
-1
0
-0.01
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Typical Switching Speeds
100
-1.0
I
C
/I
B
=10
80
60
V
CE
=-10V
-0.8
Operating and Storage Temperature Range
40
-0.6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
-0.0001
-0.001
-0.01
-1
-0.1
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-200
-200
-5
TYP.
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
-0.1
µ
A
h
FE
- Normalised Gain (%)
20
V
BE(sat)
- (Volts)
-0.4
-0.0001
-0.2
-0.001
-0.01
-0.1
-1
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
1
V
CB
=-160V
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-0.1
-0.3
-1
-1
µ
A
-1.4
-1.2
V
EB
=-4V
V
V
V
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
IC=-100mA, V
CE
=-10V*
V
CE
=-10V
0.1
V
BE
- (Volts)
-1.0
-0.8
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
-0.0001
10
-0.001
-0.01
-0.1
-1
100
1000
I
C
- Collector Current (Amps)
-0.6
0.001
1
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Static Forward Current
Transfer Ratio
Transition
Frequency
50
50
f
T
100
300
MHz
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-204
V
BE(on)
v I
C
Safe Operating Area
3-205
ZTX576
ZTX576
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
TYPICAL CHARACTERISTICS
I
B1
=I
B2
=I
C
/10
-0.8
ts
800
tf
td
nS
400 100
200
tr
0
-0.1
-1
0
50
600
tf
nS
1000
ISSUE 1 APRIL 94
FEATURES
* 200 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
C
B
I
C
/I
B
=10
-0.6
tr ts
nS µS
500 5
400
4
E
-0.4
300
3
200
td
2
V
CE(sat)
- (Volts)
Switching time
-0.2
E-Line
TO92 Compatible
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-200
-200
-5
-2
-1
1
-55 to +200
UNIT
V
V
V
A
A
W
°C
100
1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
0
0
-0.0001
-0.001
-0.01
-0.1
-1
0
-0.01
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Typical Switching Speeds
100
-1.0
I
C
/I
B
=10
80
60
V
CE
=-10V
-0.8
Operating and Storage Temperature Range
40
-0.6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
-0.0001
-0.001
-0.01
-1
-0.1
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-200
-200
-5
TYP.
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
-0.1
µ
A
h
FE
- Normalised Gain (%)
20
V
BE(sat)
- (Volts)
-0.4
-0.0001
-0.2
-0.001
-0.01
-0.1
-1
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
h
FE
v I
C
Single Pulse Test at T
amb
=25°C
V
BE(sat)
v I
C
1
V
CB
=-160V
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
-0.1
-0.3
-1
-1
µ
A
-1.4
-1.2
V
EB
=-4V
V
V
V
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
IC=-100mA, V
CE
=-10V*
V
CE
=-10V
0.1
V
BE
- (Volts)
-1.0
-0.8
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
-0.0001
10
-0.001
-0.01
-0.1
-1
100
1000
I
C
- Collector Current (Amps)
-0.6
0.001
1
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
Static Forward Current
Transfer Ratio
Transition
Frequency
50
50
f
T
100
300
MHz
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-204
V
BE(on)
v I
C
Safe Operating Area
3-205