ZTX458 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> ZTX458

Preview

ZTX458: DescriptionNPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size50KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

Download Datasheet Parametric View All

ZTX458 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	ZTX458	-	-	View	Buy Now

ZTX458 Overview

NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

ZTX458 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	0.5 V

Preview

Download Datasheet

View All

ZTX458

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

TYPICAL CHARACTERISTICS

I

C

/I

B

=10

1.6

1.4

I

C

/I

B

=10

I

C

/I

B

=20

I

C

/I

B

=50

T

amb

=25°C

1.6

1.4

-55°C

+25°C

+100°C

+175°C

ISSUE 2 MARCH 1994

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

C

B

1.2

1.0

E

0.8

V

CE(sat)

- (Volts)

0.4

V

CE(sat)

- (Volts)

0.6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

0.01

0.1

1

10 20

E-Line

TO92 Compatible

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

VALUE

400

5

300

1

-55 to +200

UNIT

V

mA

W

°C

0.4

0.2

0

0.001

0.01

0.1

1

10 20

0

0.001

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

V

CE(sat)

v I

C

V

CE(sat)

v I

C

1.6

V

CE

=10V

I

C

/I

B

=10

1.4

+100°C

+25°C

-55°C

300

1.6

-55°C

+25°C

+100°C

+175°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

MIN.

TYP.

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

CES

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn On Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

400

5

1.4

MAX.

UNIT

V

100

nA

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA*

I

E

=100

µ

A

V

CB

=320V

VCE=320V

1.2

1.0

200

1.0

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

0.01

0.1

1

10 20

0.8

0.4

V

BE(sat)

- (Volts)

0.6

100

0.6

0.4

h

FE

- Normalised Gain

0.2

0

0.001

0.01

0.1

1

10 20

0

0.001

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

Collector Cut-Off

Current

Collector Cut-Off

Current

h

FE

v I

C

Single Pulse Test at T

amb

=25°C

V

BE(sat)

v I

C

1.0

100

0.2

0.5

0.9

nA

V

EB

=4V

I

C

=20mA, I

B

=2mA

I

C

=50mA, I

B

=6mA

I

C

=50mA, I

B

=5mA

IC=50mA, V

CE

=10V

V

CE

=10V

1.6

1.4

-55°C

+25°C

+100°C

+175°C

1.2

0.1

1.0

V

BE

- (Volts)

0.8

0.6

0.2

I

C

- Collector Current (Amps)

0.4

0.01

D.C.

1s

100ms

10ms

1.0ms

0.1ms

100

15

f

T

50

1000

300

MHz

I

C

=1mA, V

CE

=10V

I

C

=50mA, V

CE

=10V

I

C

=100mA, V

CE

=10V*

I

C

=10mA, V

CE

=20V

f=20MHz

0

10

100

0.001

0.01

0.1

1

10 20

0.001

1

I

C

-

Collector Current (Amps)

V

CE

-

Collector Voltage (Volts)

V

BE(on)

v I

C

Safe Operating Area

Collector-Base

Breakdown Voltage

C

obo

5

pF

V

CB

=20V, f=1MHz

3-183

3-182

Recommended Resources

Capacitive sensing detection circuit

Wiring of lightning protection network on the roof of a multi-story residential building

Protection circuit for DC electric excitation circuit_2

Infrared sensor signal processor application circuit

Small cordless phone production circuit diagram

±15V tracking regulated power supply part 5

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components