ZTX455 datasheet, PDF - EEWORLD Datasheet

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ZTX455: DescriptionNPN SILICON PLANAR MEDIUM POWER TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size49KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

ZTX455 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	140 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.7 V

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ZTX454

ZTX455

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ZTX454

ZTX455

TYPICAL CHARACTERISTICS

µS

100

0.1

900

0.4

/10

=10V

500

800

ISSUE 2 MARCH 1994

FEATURES

* 140 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

0.3

400

700

=10

300

600

0.2

CE(sat)

- (Volts)

0.1

Switching time

200

500

100

400

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

CBO

CEO

EBO

tot

stg

SYMBOL

ZTX454

140

120

E-Line

TO92 Compatible

ZTX455

160

140

UNIT

-55 to +200

°C

0.001

0.01

0.1

300

0.01

Collector Current (Amps)

CE(sat)

v I

Typical Switching Speeds

100

=10

1.0

Operating and Storage Temperature Range

=10V

0.8

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

SYMBOL

(BR)CBO

CEO(sus)

(BR)EBO

CBO

EBO

CE(sat)

Static Forward

Current Transfer

Ratio

ZTX454

ZTX455

0.6

ZTX454

MIN.

140

120

160

140

ZTX455

MAX. MIN.

MAX.

UNIT

0.1

0.7

1.0

300

100

0.1

0.7

300

CONDITIONS.

=100

=10mA*

=100

=140V

=120V

=4V

=150mA, I

=15mA

=200mA, I

=20mA

=150mA, V

=10V*

=200mA, V

=1V*

=1A, V

=10V*

- Normalised Gain (%)

BE(sat)

- (Volts)

0.4

0.001

0.2

0.001

0.01

0.1

0.01

0.1

Collector Current (Amps)

v I

Single Pulse Test at T

amb

=25°C

BE(sat)

v I

1.2

=10V

1.0

0.1

- (Volts)

0.8

0.4

- Collector Current (Amps)

0.6

0.01

D.C.

100ms

10ms

1.0ms

100µs

0.0001

0.001

0.01

0.1

0.001

100

1000

Transition

Frequency

Output Capacitance

obo

100

MHz

* Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

Typical

3-179

=50mA, V

=10V

f=100MHz

=10V, f=1MHz

Collector Current (Amps)

Collector Voltage (Volts)

BE(on)

v I

Safe Operating Area

3-180

ZTX455 Related Products

	ZTX455	ZTX454
Description	NPN SILICON PLANAR MEDIUM POWER TRANSISTORS	NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
Is it Rohs certified?	conform to	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	15 pF	15 pF
Collector-emitter maximum voltage	140 V	120 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	30
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3
JESD-609 code	e3	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Maximum power consumption environment	2 W	2 W
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.7 V	0.7 V

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