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BC372

Description
Small Signal Bipolar Transistor, 1A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size21KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BC372 Overview

Small Signal Bipolar Transistor, 1A I(C), 1000V V(BR)CEO, 2-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

BC372 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionTO-92, 3 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage1000 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)8000
JEDEC-95 codeTO-92
JESD-30 codeO-XBCY-T3
JESD-609 codee0
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 – SEPT 93
FEATURES
* 100 Volt V
CEO
* Gain of 8k at I
C
=250mA
* I
C
=1 Amp
BC372
E
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
100
100
12
1
625
-55 to +150
TO92
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
MIN.
100
100
12
100
100
1.0
2
10K
8K
100
25
3-16
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=100
µ
A, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=250mA, I
B
=0.25mA
I
C
=250mA, I
B
=0.25mA
I
C
=100mA, V
CE
=5V*
I
C
=250mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
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