ZTX453 datasheet, PDF - EEWORLD Datasheet

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ZTX453: Description1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size46KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX453 Overview

1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR

ZTX453 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.7 V

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ZTX452

ZTX453

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ZTX452

ZTX453

TYPICAL CHARACTERISTICS

100

0.8

ISSUE 2 MARCH 1994

FEATURES

* 100 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

=10V

0.6

=10

0.4

CE(sat)

- (Volts)

0.2

0.01

0.1

0.01

0.1

- Normalised Gain (%)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

=10V

E-Line

TO92 Compatible

SYMBOL

CBO

CEO

EBO

tot

stg

ZTX452

100

-55 to +200

ZTX453

120

100

UNIT

°C

0.001

Collector Current (Amps)

CE(sat)

v I

2.2

1.4

2.0

1.8

1.2

1.6

1.4

=10

1.0

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

ZTX452

MIN.

Collector-Base

Breakdown Voltage

(BR)CBO

CEO(sus)

(BR)EBO

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

CBO

EBO

CE(sat)

BE(sat)

Static Forward

Current Transfer

Ratio

Transition

Frequency

Output Capacitance

obo

100

Emitter-Base

Breakdown Voltage

0.1

0.7

1.3

150

ZTX453

MAX. MIN.

120

100

0.1

0.7

1.3

200

MAX.

1.2

UNIT

CONDITIONS.

BE(sat)

- (Volts)

0.8

0.6

0.001

0.01

0.1

- (Volts)

1.0

0.8

0.6

=100

=10mA*

=100

=80V

=100V

=4V

=150mA, I

=15mA*

=150mA, I

=15mA*

0.4

0.01

0.1

Collector Current (Amps)

Collector-Emitter

Sustaining Voltage

BE(sat)

v I

BE(on)

v I

Single Pulse Test at T

amb

=25°C

- Collector Current (Amps)

0.1

D.C.

100ms

10ms

1.0ms

300µs

100µs

ZTX452

150

3-177

=150mA, V

=10V*

=1A, V

=10V*

MHz

=50mA, V

=10V

f=100MHz

=10V, f=1MHz

ZTX453

0.01

0.1

100

Collector Voltage (Volts)

Safe Operating Area

3-178

ZTX453 Related Products

	ZTX453	ZTX452
Description	1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3	TO-92 COMPATIBLE, 3 PIN
Reach Compliance Code	not_compliant	_compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	15 pF	15 pF
Collector-emitter maximum voltage	100 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	10
JESD-30 code	O-PBCY-W3	O-PBCY-W3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Maximum power consumption environment	2 W	2 W
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
VCEsat-Max	0.7 V	0.7 V

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