ZTX415
ZTX415
NPN SILICON PLANAR
AVALANCHE TRANSISTOR
TYPICAL CHARACTERISTICS
180
40
160
V
+
= 250V
140
1. >4x10 Operations Without Failure
2. 10
%
Operations To Failure
3. 10
!
Operations To Failure
30
- (A)
- (A)
120
C
B
100
V
+
= 200V
E
3.
20
I
80
60
2.
I
ISSUE 4 - NOVEMBER 1995
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
* Low inductance package
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
* Suitable for single, series and parallel operation
E-Line
TO92 Compatible
VALUE
260
100
UNIT
V
V
40
20
20 40 60 80 100 120 140 160 180
1.
10
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (Pulse Width=20ns)
Power Dissipation
Risetime of Base
Drive Current = 5mA/ns
0
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
MIN.
TYP.
MAX.
0
20
40
60
80 100 120 140 160 180
0
-60 -40 -20 0
Pulse Width (ns)
Temperature (°C)
Maximum Avalanche Current
v Pulse Width
I
USB
v Temperature
for the specified conditions
6
500
60
680
-55 to +175
UNIT
CONDITIONS.
V
mA
A
mW
°C
100
220
80
V
+-
=10V
200
Operating and Storage Temperature Range
PARAMETER
SYMBOL
- (V)
60
175°C
180
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V
(BR)CES
V
CEO(sus)
V
(BR)EBO
I
CBO
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
V
CE(sat)
V
BE(sat)
I
SB
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
f
T
Collector-Base
Capacitance
C
cb
15
25
25
40
8
MHz
pF
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-171
260
100
6
0.1
10
0.1
0.5
0.9
V
V
V
µ
A
µ
A
µ
A
h
160
I
*
=50mA
I
*
=100mA
I
*
=200mA
1n
10n
100n
40
25°C
V
140
20
-55°C
I
C
=1mA
T
amb
= -55 to +175°C
I
C
=100
µ
A
I
E
=10
µ
A
V
CB
=180V
V
CB
=180V, T
amb
=100°C
V
EB
=4V
V
V
I
C
=10mA, I
B
=1mA*
I
C
=10mA, I
B
=1mA*
A
A
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, I
E
=0
f=100MHz
120
0
100
µ
A
1mA
10mA
100mA
1A
100
100p
Collector Current
Collector-Emitter Capacitance (F)
h
FE
v I
C
Minimum starting voltage
as a function of capacitance
180
160
175
170
I
*
=60mA
150
- (V)
- (V)
165
C = 620pF
I
*
=100mA
160
I
*
=200mA
140
V
155
V
150
C=620pF
120
145
1
10
100
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Risetime of Base Drive (mA/ns)
Temperature (°C)
Minimum starting voltage
as a function of drive current
Minimum starting voltage
as a function of temperature
3-172
ZTX415
ZTX415
NPN SILICON PLANAR
AVALANCHE TRANSISTOR
TYPICAL CHARACTERISTICS
180
40
160
V
+
= 250V
140
1. >4x10 Operations Without Failure
2. 10
%
Operations To Failure
3. 10
!
Operations To Failure
30
- (A)
- (A)
120
C
B
100
V
+
= 200V
E
3.
20
I
80
60
2.
I
ISSUE 4 - NOVEMBER 1995
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
* Low inductance package
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
* Suitable for single, series and parallel operation
E-Line
TO92 Compatible
VALUE
260
100
UNIT
V
V
40
20
20 40 60 80 100 120 140 160 180
1.
10
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (Pulse Width=20ns)
Power Dissipation
Risetime of Base
Drive Current = 5mA/ns
0
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
MIN.
TYP.
MAX.
0
20
40
60
80 100 120 140 160 180
0
-60 -40 -20 0
Pulse Width (ns)
Temperature (°C)
Maximum Avalanche Current
v Pulse Width
I
USB
v Temperature
for the specified conditions
6
500
60
680
-55 to +175
UNIT
CONDITIONS.
V
mA
A
mW
°C
100
220
80
V
+-
=10V
200
Operating and Storage Temperature Range
PARAMETER
SYMBOL
- (V)
60
175°C
180
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
V
(BR)CES
V
CEO(sus)
V
(BR)EBO
I
CBO
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
V
CE(sat)
V
BE(sat)
I
SB
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
f
T
Collector-Base
Capacitance
C
cb
15
25
25
40
8
MHz
pF
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-171
260
100
6
0.1
10
0.1
0.5
0.9
V
V
V
µ
A
µ
A
µ
A
h
160
I
*
=50mA
I
*
=100mA
I
*
=200mA
1n
10n
100n
40
25°C
V
140
20
-55°C
I
C
=1mA
T
amb
= -55 to +175°C
I
C
=100
µ
A
I
E
=10
µ
A
V
CB
=180V
V
CB
=180V, T
amb
=100°C
V
EB
=4V
V
V
I
C
=10mA, I
B
=1mA*
I
C
=10mA, I
B
=1mA*
A
A
V
C
=200V, C
CE
=620pF
V
C
=250V, C
CE
=620pF
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, I
E
=0
f=100MHz
120
0
100
µ
A
1mA
10mA
100mA
1A
100
100p
Collector Current
Collector-Emitter Capacitance (F)
h
FE
v I
C
Minimum starting voltage
as a function of capacitance
180
160
175
170
I
*
=60mA
150
- (V)
- (V)
165
C = 620pF
I
*
=100mA
160
I
*
=200mA
140
V
155
V
150
C=620pF
120
145
1
10
100
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Risetime of Base Drive (mA/ns)
Temperature (°C)
Minimum starting voltage
as a function of drive current
Minimum starting voltage
as a function of temperature
3-172
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