BC637 datasheet, PDF - EEWORLD Datasheet

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BC637: Description1500mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size71KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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BC637 Overview

1500mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC637 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH CURRENT DRIVER
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz
VCEsat-Max	0.5 V

BC637 Related Products

	BC637	BF494	BC639-16	BCX59	BCX78	BF240
Description	1500mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	Si, SMALL SIGNAL TRANSISTOR, TO-92
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
Maximum collector current (IC)	1.5 A	-	1 A	0.1 A	0.1 A	0.025 A
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	-	25	80	40	65
JEDEC-95 code	TO-92	-	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	-	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	-	e0	e0	e0	e0
Number of components	1	-	1	1	1	1
Number of terminals	3	-	3	3	3	3
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	-	NPN	NPN	PNP	NPN
Maximum power dissipation(Abs)	0.8 W	-	1 W	0.625 W	0.625 W	0.35 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	130 MHz	-	130 MHz	125 MHz	200 MHz	-

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