APTM20DHM10
Asymmetrical - bridge
MOSFET Power Module
V
DSS
= 200V
R
DSon
= 10mW max @ Tj = 25°C
I
D
= 175A @ Tc = 25°C
Application
·
·
·
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
·
Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
·
·
·
Benefits
S4
G4
OUT2
OUT1
G1
S1
VBUS
0/VBUS
·
·
·
·
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
Max ratings
200
175
131
700
±30
10
694
89
50
2500
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM20DHM10 – Rev 2
May, 2004
T
c
= 25°C
APTM20DHM10
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
I
DSS
R
DS(on)
V
GS(th)
I
GSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V, I
D
= 375µA
V
GS
= 0V,V
DS
= 200V
V
GS
= 0V,V
DS
= 160V
T
j
= 25°C
T
j
=
125°C
Min
200
Typ
Max
150
750
10
5
±150
Unit
V
µA
mW
V
nA
V
GS
= 10V, I
D
= 87.5A
V
GS
= V
DS
, I
D
= 5mA
V
GS
= ±30 V, V
DS
= 0V
3
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
u
Turn-off Switching Energy
v
Turn-on Switching Energy
u
Turn-off Switching Energy
v
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 100V
I
D
= 150A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
I
D
= 150A
R
G
= 2.5W
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 150A, R
G
= 2.5Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 150A, R
G
= 2.5Ω
Min
Typ
13.7
4.36
0.2
224
86
94
28
56
81
99
926
910
1216
1062
µJ
µJ
ns
Max
Unit
nF
nC
Diode ratings and characteristics
Symbol Characteristic
Maximum Average Forward Current
I
F(AV)
V
F
Diode Forward Voltage
Test Conditions
50% duty cycle
I
F
= 200A
I
F
= 400A
I
F
= 200A
I
F
= 200A
V
R
= 133V
di/dt = 400A/µs
I
F
= 200A
V
R
= 133V
di/dt = 400A/µs
Min
T
c
= 90°C
Typ
200
1
1.4
0.9
60
110
400
1680
Max
Unit
A
V
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
May, 2004
2–6
APTM20DHM10 – Rev 2
u
E
on
includes diode reverse recovery.
v
In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
APTM20DHM10
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M6
M5
Transistor
Diode
2500
-40
-40
-40
3
2
Min
Typ
Max
0.18
0.32
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline
APT website – http://www.advancedpower.com
3–6
APTM20DHM10 – Rev 2
May, 2004
APTM20DHM10
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
0.18
0.9
0.16
0.14
0.7
0.12
0.5
0.1
0.08
0.3
0.06
0.04
0.1
0.02
0.05
0
0.00001
Thermal Impedance (°C/W)
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
500
V
GS
=15&10V
9V
400
I
D
, Drain Current (A)
Transfert Characteristics
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
I
D
, Drain Current (A)
400
300
200
100
0
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
R
DS
(on) vs Drain Current
1.2
1.15
1.1
1.05
1
0.95
0.9
0
40
80
120 160 200
I
D
, Drain Current (A)
240
V
GS
=20V
7.5V
7V
6.5V
6V
5.5V
300
200
T
J
=25°C
T
J
=125°C
T
J
=-55°C
100
0
2
3
4
5
6
7
8
9
V
GS
, Gate to Source Voltage (V)
R
DS
(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
T
C
, Case Temperature (°C)
150
May, 2004
V
GS
=10V
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 87.5A
APT website – http://www.advancedpower.com
4–6
APTM20DHM10 – Rev 2
APTM20DHM10
R
DS
(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
V
GS
(TH), Threshold Voltage
(Normalized)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
Ciss
10000
Coss
1
I
D
, Drain Current (A)
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
limited by
R
DSon
ON resistance vs Temperature
V
GS
=10V
I
D
= 87.5A
1000
100µs
100
1ms
10
Single pulse
T
J
=150°C
10ms
DC line
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
12
V
DS
=40V
I
D
=150A
10
T
J
=25°C
V
DS
=100V
8
6
4
2
0
0
50
100
150
200
250
Gate Charge (nC)
V
DS
=160V
1000
Crss
100
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
APT website – http://www.advancedpower.com
5–6
APTM20DHM10 – Rev 2
May, 2004
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