ZTX451 datasheet, PDF - EEWORLD Datasheet

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ZTX451: Description1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size49KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX451 Overview

1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR

ZTX451 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	2 W
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.35 V

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ZTX450

ZTX451

NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ZTX450

ZTX451

TYPICAL CHARACTERISTICS

/10

=-10V

800

700

500

200

100

0.1

300

400

600

0.4

td,tr,tf

ISSUE 2 MARCH 1994

FEATURES

* 60 Volt V

CEO

* 1 Amp continuous current

* P

tot

= 1 Watt

140

0.3

120

=10

100

0.2

CE(sat)

- (Volts)

ZTX451

Switching time

0.1

E-Line

TO92 Compatible

SYMBOL

CBO

CEO

EBO

tot

stg

ZTX450

-55 to +200

ZTX451

UNIT

°C

ZTX450

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

0.001

0.01

0.1

0.01

Collector Current (Amps)

CE(sat)

v I

Typical Switching Speeds

100

=10

1.0

0.9

Operating and Storage Temperature Range

0.8

0.7

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

ZTX450

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

ZTX450

0.6

ZTX451

MAX. MIN.

(BR)CBO

CEO(sus)

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

100

0.1

0.25

1.1

300

MAX.

UNIT

CONDITIONS.

0.5

BE(sat)

- (Volts)

0.4

- Normalised Gain (%)

0.3

0.001

0.01

0.1

=100

=10mA*

=100

0.001

0.01

0.1

Collector Current (Amps)

v I

Single Pulse Test at T

amb

=25°C

BE(sat)

v I

1.4

0.1

0.35

1.1

150

Static Forward

Current Transfer

Ratio

=45V

=60V

=4V

=150mA, I

=15mA*

=150mA, I

=15mA*

=150mA, V

=10V*

=1A, V

=10V*

1.2

- (Volts)

1.0

0.8

0.1

D.C.

100ms

10ms

1.0ms

300µs

100µs

0.001

0.01

0.1

- Collector Current (Amps)

0.6

ZTX451

0.01

0.1

100

Collector Current (Amps)

Collector Voltage (Volts)

BE(on)

v I

Safe Operating Area

Transition

Frequency

Output Capacitance

obo

150

3-175

150

MHz

=50mA, V

=10V

f=100MHz

=10V, f=1MHz

3-176

ZTX451 Related Products

	ZTX451	ZTX450
Description	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR	1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-based maximum capacity	15 pF	15 pF
Collector-emitter maximum voltage	60 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	10	15
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	200 °C	200 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power consumption environment	2 W	2 W
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
Guideline	CECC	CECC
surface mount	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
VCEsat-Max	0.35 V	0.25 V

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