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A5T5210

Description
50mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size73KB,2 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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A5T5210 Overview

50mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR

A5T5210 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTexas Instruments
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz

A5T5210 Related Products

A5T5210 A5T5209
Description 50mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR 50mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible incompatible
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 0.05 A 0.05 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 250 150
JESD-30 code O-PBCY-W3 O-PBCY-W3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.625 W 0.625 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz
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