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ZTX325

Description
NPN SILICON PLANAR RF TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size50KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZTX325 Overview

NPN SILICON PLANAR RF TRANSISTOR

ZTX325 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionE-LINE PACKAGE-3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.05 A
Collector-based maximum capacity0.85 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)1300 MHz
ZTX325
ZTX325
CONDITIONS.
f=500MHz, V
CE
=5V, I
C
=2mA,
R
S
=50
I
C
=14mA, V
CE
=6V, f=217MHz
V
0
=100mV, R
L
=37.5
,
f
1
=183MHz, f
2
=200MHz
ISSUE 2 – MARCH 94
FEATURES
* High f
T
, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
NPN SILICON PLANAR
RF TRANSISTOR
ELECTRICAL CHARACTERISTICS
dB
dB
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
Noise Figure
N
5.0
Intermodulation
Distortion
mW
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Mean Collector Current (Averaged over 100
µ
s)
Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
V
CE
=10V
d
im
-53
C
B
Output Power
(at T
case
=25°C)*
SYMBOL
V
CBO
V
CEO
V
EBO
I
AV
I
CM
P
tot
T
j
:T
stg
P
O
175
ABSOLUTE MAXIMUM RATINGS.
30
15
2.5
25
50
350
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mA
mW
-55 to +200
°C
E
V
CE
=13.5V, I
C
=22.5mA
P
in
=25mW, f=500MHz
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
TYPICAL CHARACTERISTICS
80
3
f=400MHz
60
2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Sustaining Voltage
10µ
100µ
1m
10m
100m
f
T
- (GHz)
V
CE
=10V
40
SYMBOL
V
CEO(SUS)
V
(BR)EBO
I
CBO
MIN.
15
5
TYP.
MAX. UNIT
V
V
10
nA
CONDITIONS.
I
C
=10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
CB
=15V, I
E
=0
1
V
CE
=5V
0
0.1
1
10
100
1000
h
FE
- Normalised Gain
20
I
C
-
Collector Current (mA)
I
C
-
Collector Current (A)
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Static Forward Current
Transfer Ratio
Transition Frequency
Capacitance, Collector
Depletion Layer
Capacitance, Emitter
Depletion Layer
Feedback Capacitance
Feedback Time Constant
f
T
v I
C
h
FE
v I
C
I
CES
h
FE
25
20
f
T
C
TC
C
TE
-C
re
r
bb
’C
b
’
c
2.0
3-161
0.85
1.0
1.3
10
150
125
µ
A
V
CE
=15V, V
BE
=0
2.0
f=1MHz
I
C
=2mA, V
CE
=1V*
I
C
=25mA, V
CE
=1V*
GHz
GHz
1.5
2.0
pF
pF
pF
12
ps
I
C
=2mA, V
CE
=5V, f=400MHz
I
C
=25mA, V
CE
=5V, f=400MHz
V
CB
=10V, I
E
=I
e
=0, f=1MHz
VEB=0.5V, I
C
=I
c
=0, f=1MHz
V
CE
=5V, I
C
=2mA, f=1MHz
V
CB
=5V, -I
E
=2mA, f=10.7MHz
C
RE
- (pF)
1.5
1.0
0.5
0
10
20
30
V
CE
-
(V)
C
RE
v V
CE
3-162
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