BD792 datasheet, PDF - EEWORLD Datasheet

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BD792: Description4A, 100V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, FORMERLY TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size373KB，61 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BD792 Overview

4A, 100V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, FORMERLY TO-126, 3 PIN

BD792 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-225AA
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	5
JEDEC-95 code	TO-225AA
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Complementary Plastic Silicon

Power Transistors

. . . designed for low power audio amplifier and low–current, high speed switching

applications.

•

High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min) — BD789, BD790

VCEO(sus)

= 100 Vdc (Min) — BD791, BD792

•

High DC Current Gain @ IC = 200 mAdc

hFE = 40–250

•

Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc

•

High Current Gain — Bandwidth Product —

fT = 40 MHz (Min) @ IC = 100 mAdc)

BD789

BD791*

PNP

BD790

BD792*

*Motorola Preferred Device

NPN

*MAXIMUM RATINGS

Rating

4 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80, 100 VOLTS

15 WATTS

PD, POWER DISSIPATION (WATTS)

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Symbol

VCEO

VCB

BD789

BD790

BD791

BD792

100

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

VEBO

6.0

4.0

8.0

1.0

Collector Current — Continuous

— Peak

Base Current

Total Power Dissipation @ TC = 25

Derate above 25

Operating and Storage Junction

Temperature Range

0.12

Watts

TJ,Tstg

– 65 to + 150

CASE 77–08

TO–225AA TYPE

THERMAL CHARACTERISTICS

Characteristic

Symbol

θJC

Max

Unit

Thermal Resistance, Junction to Case

8.34

C/W

1.6

PD, POWER DISSIPATION (WATTS)

1.2

8.0

0.8

4.0

0.4

100

120

T, TEMPERATURE (°C)

140

160

Figure 1. Power Derating

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 7

3–198

Motorola Bipolar Power Transistor Device Data

BD792 Related Products

	BD792	BD789	BD790
Description	4A, 100V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, FORMERLY TO-126, 3 PIN	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, FORMERLY TO-126, 3 PIN	4A, 80V, PNP, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, FORMERLY TO-126, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible
Maker	ON Semiconductor	ON Semiconductor	ON Semiconductor
Parts packaging code	TO-225AA	TO-225AA	TO-225AA
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	4 A	4 A	4 A
Collector-emitter maximum voltage	100 V	80 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	5	5	5
JEDEC-95 code	TO-225AA	TO-225AA	TO-225AA
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225	225	225
Polarity/channel type	PNP	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	40 MHz	40 MHz	40 MHz

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