ZOWIE
SGC10DLH THRU SGC10MLH
Low VF Rectifier Diode
FEATURES
*
*
*
*
*
*
*
*
Halogen-free type
Lead free product, compliance to RoHS
GPRC (Glass passivated rectifier chip) inside
Glass passivated cavity-free junction
Lead less chip form, no lead damage
Low power loss, high efficiency
For surface mounted applications
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low VF Rectifier Diode
(200V~1000V / 1.0A)
OUTLINE DIMENSIONS
Case : 1206-S
1.60 ± 0.1
Unit : mm
1.50
Typ.
3.40 ± 0.1
0.05
R0.
40
0.70 ± 0.2
0.70 ± 0.2
APPLICATION
0.96 ± 0.20
* General purpose rectification
* Surge absorption
MECHANICAL DATA
Case :
Packed with FRP substrate and epoxy underfilled
Terminals :
Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity :
Laser Cathode band marking
Weight :
0.012 gram
MARKING
Cathode mark
Amps class
10
DL
.
Voltage class
Voltage class: D = 200V, G = 400V, J = 600V
K = 800V, M = 1000V
Halogen-free type
PACKING
*
3,000 pieces per 7" (178mm ± 2mm) reel
*
4 reels per box
*
6 boxes per carton
Low VF
Absolute Maximum Ratings (Ta = 25 C)
Rating
ITEM
Repetitive peak reverse voltage
Average forward current
Peak forward surge current (8.3ms single half sine-wave)
Operating junction temperature Range
Storage temperature Range
o
Symbol
V
RRM
I
F(AV)
I
FSM
T
j
T
STG
SGC10DLH
200
SGC10GLH
400
SGC10JLH
600
1.0
SGC10KLH
800
SGC10MLH
1000
Unit
V
A
40
-65 to +175
-65 to +175
o
C
Electrical characteristics (Ta = 25 C)
ITEM
Forward voltage
o
Symbol
V
F
I
F
= 1.0A
Conditions
Min.
-
Typ.
0.92
Max.
0.95
Unit
V
Repetitive peak reverse current
Junction capacitance
I
RRM
C
j
R
th(JA)
V
R
= Max. V
RRM
, Ta = 25
o
C
V
R
= 4V, f = 1.0 MHz
Junction to ambient (NOTES 1)
Junction to lead (NOTES 1)
-
-
-
-
0.08
12
130
40
5
-
-
o
uA
pF
Thermal resistance
R
th(JL)
-
C/W
NOTES : (1) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
(2) Preliminary draft.
REV. 2
2009/08
ZOWIE
SGC10DLH THRU SGC10MLH
(200V~1000V / 1.0 A)
FIG.1 - FORWARD CURRENT DERATING CURVE
1.25
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT,
AMPERES
60Hz
RESISTIVE OR
INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
50
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1.00
40
0.75
30
0.50
20
0.25
10
0
0
25
50
75
100
125
o
0
150
175
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10.00
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
10
T
J
=150 C
o
1.00
T
J
=125 C
o
1.0
0.10
0.10
0.01
T
J
=25 C
o
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
100
JUNCTION CAPACITANCE, pF
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
TJ=25 C
o
REV. 2
2009/08
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