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BCW60DT/R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size125KB,3 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BCW60DT/R Overview

Transistor

BCW60DT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)380
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Nominal transition frequency (fT)125 MHz

BCW60DT/R Related Products

BCW60DT/R BCW60BT/R BCW60CT/R
Description Transistor Transistor Transistor
Is it Rohs certified? conform to conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 380 175 250
JESD-609 code e3 e3 e3
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W
surface mount YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Nominal transition frequency (fT) 125 MHz 125 MHz 125 MHz
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