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BD649-6261

Description
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size96KB,3 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric View All

BD649-6261 Overview

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

BD649-6261 Parametric

Parameter NameAttribute value
MakerHarris
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)8 A
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment62.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max2 V
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