BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-226AA (TO-92)
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
Features
• PNP Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for
AF-driver stages and low-power output stages.
• These types are also available subdivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementary types, the NPN
transistors BC327 and BC338 are recommended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
max.
∅
0.022 (0.55)
0.098 (2.5)
Dimensions in inches
and (millimeters)
Bottom
View
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
BC327
BC328
BC327
BC328
Symbol
–V
CES
–V
CEO
–V
EBO
–I
C
–I
CM
–I
B
P
tot
R
ΘJA
T
j
T
S
Ratings at 25°C ambient temperature unless otherwise specified.
Value
50
30
45
25
5
800
1
100
625
(1)
200
(1)
150
–65 to +150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Document Number 88158
08-May-02
www.vishay.com
1
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
Current Gain Group
J
= 25°C unless otherwise noted)
Symbol
-16
-25
-40
-16
-25
-40
Test Condition
-V
CE =
1 V, -I
C
= 100 mA
Min
100
160
250
60
100
170
—
—
—
—
—
—
45
25
50
30
5
—
—
Typ
160
250
400
130
200
320
2
2
—
—
—
—
—
—
—
—
—
100
12
Max
250
400
630
—
—
—
100
100
10
10
0.7
1.2
—
—
—
—
—
—
—
Unit
DC Current Gain
Current Gain Group
h
FE
-V
CE =
1 V, -I
C
= 300 mA
-V
CE
= 45 V
-V
CE
= 25 V
= 45 V, T
amb
= 125°C
= 25 V, T
amb
= 125°C
—
Collector-Emitter Cutoff Current
BC327
BC328
BC327
BC328
-I
CES
-V
CE
-V
CE
-
I
C
nA
nA
µA
µA
V
V
V
V
V
MHz
pF
Collector Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Gain-Bandwidth Product
Collector-Base Capacitance
-V
CEsat
-V
BE
BC327
-V(
BR)CEO
BC328
BC327
-V(
BR)CES
BC328
-V(
BR)EBO
f
T
C
CBO
= 500 mA, -I
B
= 50 mA
= 1 V, -I
C
= 300 mA
-I
C
= 10 mA
-I
C
= 0.1 mA
-
I
E
-
V
CE
= 0.1 mA
-
V
CE
= 5 V, -I
C
= 10 mA
f = 50 MHz
= 10 V, f = 1 MHz
-
V
CB
www.vishay.com
2
Document Number 88158
08-May-02
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