SGM2310
Elektronische Bauelemente
3A,
60V,R
DS(ON)
90m
Ω
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SGM2310 utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.The SGM2310 is
universally used for all commercial-industrial applications.
SOT-89
Features
*
Small Package Outline
*
Simple Drive Requirement
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5° TYP.
0.70 REF.
REF.
A
B
C
D
E
F
REF.
G
H
I
J
K
L
M
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V
Continuous Drain Current, V
GS
@4.5V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
3
3
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
C
I
DM
P
D
@T
A
=25
C
o
o
o
Ratings
60
±20
3.0
2.3
10
1.5
0.01
-55~+150
Unit
V
V
A
A
A
W
W /
o
C
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Rthj-a
Ratings
83.3
o
Unit
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
4
SGM2310
Elektronische Bauelemente
3A, 60V,R
DS(ON)
90m
Ω
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
C
)
Drain-Source Leakage Current (Tj=70
C
)
Static Drain-Source On-Resistance
o
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
60
_
Typ.
_
Max.
_
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=250uA
Reference to 25 C, I
D
=1mA
V
DS
=V
GS,
I
D
=250uA
V
GS
=
±
20V
V
DS
=60V,V
GS
=0
V
DS
=48V,V
GS
=0
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
I
D
=3A
V
DS
=48V
V
GS
=4.5V
o
0.05
_
_
_
_
_
_
1.0
_
_
_
_
3.0
±
100
10
25
90
120
10
_
_
_
R
DS(ON)
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
m
Ω
Total Gate Charge
2
6
1.6
3
6
5
16
3
490
55
40
5
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
2
nC
_
_
_
_
_
_
_
V
DS
=30V
I
D
=1A
nS
V
GS
=10V
R
G
=3.3
Ω
R
D
=30
Ω
_
_
_
780
_
_
pF
V
GS
=0V
V
DS
=25V
f=1.0MHz
_
_
S
V
DS
=5V, I
D
=3A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Trr
Qrr
Min.
_
_
Typ.
_
Max.
1.2
Unit
V
Test Condition
I
S
=1.2A, V
GS
=0V.
Is=3A,V
GS
=0V
dl/dt=100A/uS
Reverse Recovery Time
Reverse Recovery Charge
25
_
_
nS
_
26
nC
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on FR4 board, t
≦
10sec.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SGM2310
Elektronische Bauelemente
3A,
60V,R
DS(ON)
90m
Ω
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page
3
of
4
SGM2310
Elektronische Bauelemente
3A,
60V,R
DS(ON)
90m
Ω
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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