ZTX1049A
ZTX1049A
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
180
1.0
D=1(D.C)
160
t1
140
Am
120
tp
D=t1
0.75
tp
t
en
bi
100
D=0.5
m
te
0.50
C
B
80
E
D=0.2
e
ur
at
r
pe
60
D=0.1
D=0.05
40
0.25
ISSUE 1 JUNE 1995
FEATURES
* V
CEV
= 80V
* Very low saturation voltages
* High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight converters
* Emergency lighting
* DC-DC converters
20
Single Pulse
E-Line
TO92 Compatible
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
80
25
5
20
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
0.1ms
1ms
10ms
100ms
1s
10s
100s
Max Power Dissipation - (Watts)
0
ABSOLUTE MAXIMUM RATINGS.
-40
0
40
80
120
160
200
Pulse Width
T -Temperature
(°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX ZTX1049A Spice model Last revision 15/6/95
*
.MODEL ZTX1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100
+
ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+
ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007
+
+
CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36
VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9
*
*
*
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
©
1995 ZETEX PLC
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
These are supported by
agents and distributors in
major countries world-wide
©
Zetex plc 1997
Internet:
http://www.zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
ZTX1049A
TYPICAL CHARACTERISTICS
1.0
+25°C
0.8
0.6
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=100
I
C
/I
B
=200
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=100
0.8
1.0
ZTX1049A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
V
I
C
=100µA
IC=100µA
0.6
0.4
0.2
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
CONDITIONS.
Collector-Base Breakdown
Voltage
V
V
V
IC=100µA, V
EB
=1V
0
1mA
10mA
10A
100A
100mA
1A
V
(BR)CBO
80
120
Collector-Emitter
Breakdown Voltage
IC=10mA
V
CES
80
120
Collector-Emitter
Breakdown Voltage
V
CEO
25
35
Collector-Emitter
Breakdown Voltage
V
I
E
=100µA
IC-Collector Current
V
CEV
80
120
1mA
10mA
100mA
1A
10A
100A
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.75
V
CE
(sat) v I
C
I
C
-Collector Current
V
CE
(sat) v IC
1.4
1.2
Collector Cut-Off Current
nA
nA
600
+100°C
+25°C
-55°C
500
400
300
200
100
0
1mA
10mA
100mA
1A
I
CBO
V
CB
=50V
V
EB
=4V
VCES=50V
700 V
CE
=2V
0.3
10
Emitter Cut-Off Current
nA
I
EBO
0.3
10
I
C
/I
B
=100
1.0
-55°C
+25°C
+100°C
0.8 +175°C
0.6
0.4
0.2
10A
100A
0
10mA
100mA
1A
10A
100A
Collector Emitter Cut-Off
Current
mV
mV
mV
mV
mV
mV
IC=4A, V
CE
=2V*
1.4
1.2
I
CES
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=4A, I
B
=50mA*
I
C
=4A, I
B
=50mA*
0.3
10
Collector-Emitter Saturation V
CE(sat)
Voltage
30
60
125
155
45
80
180
220
Base-Emitter
Saturation Voltage
V
BE(sat)
890
950
I
C
-Collector Current
Base-Emitter Turn-On
Voltage
V
BE(on)
820
900
h
FE
V IC
I
C
-Collector Current
V
BE
(sat) v I
C
100
V
CE
=2V
1.0
-55°C
+25°C
+100°C
0.8 +175°C
0.6
0.4
0.2
0
1mA
10mA
100mA
1A
10A
100A
Static Forward Current
Transfer Ratio
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
MHz
pF
ns
ns
V
CB
=10V, f=1MHz
I
C
=4A, I
B
=40mA, V
CC
=10V
I
C
=4A, I
B
=±40mA, V
CC
=10V
I
C
=50mA, V
CE
=10V
f=50MHz
h
FE
Singe Pulse Test T
amb
= 25°C
250
300
300
200
35
430
450
450
350
70
1200
10
1
0.1
Transition Frequency
f
T
180
Output Capacitance
C
obo
45
60
DC
1s
100ms
10ms
1ms
100
µ
s
0.1
0.1V
Turn - On Time
t
on
125
1V
10V
100V
Turn -Off Time
t
off
380
I
C
-Collector Current
V
BE
(on) v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZTX1049A
TYPICAL CHARACTERISTICS
1.0
+25°C
0.8
0.6
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=100
I
C
/I
B
=200
0.4
0.2
0
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=100
0.8
1.0
ZTX1049A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
UNIT
V
I
C
=100µA
IC=100µA
0.6
0.4
0.2
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
CONDITIONS.
Collector-Base Breakdown
Voltage
V
V
V
IC=100µA, V
EB
=1V
0
1mA
10mA
10A
100A
100mA
1A
V
(BR)CBO
80
120
Collector-Emitter
Breakdown Voltage
IC=10mA
V
CES
80
120
Collector-Emitter
Breakdown Voltage
V
CEO
25
35
Collector-Emitter
Breakdown Voltage
V
I
E
=100µA
IC-Collector Current
V
CEV
80
120
1mA
10mA
100mA
1A
10A
100A
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
8.75
V
CE
(sat) v I
C
I
C
-Collector Current
V
CE
(sat) v IC
1.4
1.2
Collector Cut-Off Current
nA
nA
600
+100°C
+25°C
-55°C
500
400
300
200
100
0
1mA
10mA
100mA
1A
I
CBO
V
CB
=50V
V
EB
=4V
VCES=50V
700 V
CE
=2V
0.3
10
Emitter Cut-Off Current
nA
I
EBO
0.3
10
I
C
/I
B
=100
1.0
-55°C
+25°C
+100°C
0.8 +175°C
0.6
0.4
0.2
10A
100A
0
10mA
100mA
1A
10A
100A
Collector Emitter Cut-Off
Current
mV
mV
mV
mV
mV
mV
IC=4A, V
CE
=2V*
1.4
1.2
I
CES
I
C
=0.5A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=4A, I
B
=50mA*
I
C
=4A, I
B
=50mA*
0.3
10
Collector-Emitter Saturation V
CE(sat)
Voltage
30
60
125
155
45
80
180
220
Base-Emitter
Saturation Voltage
V
BE(sat)
890
950
I
C
-Collector Current
Base-Emitter Turn-On
Voltage
V
BE(on)
820
900
h
FE
V IC
I
C
-Collector Current
V
BE
(sat) v I
C
100
V
CE
=2V
1.0
-55°C
+25°C
+100°C
0.8 +175°C
0.6
0.4
0.2
0
1mA
10mA
100mA
1A
10A
100A
Static Forward Current
Transfer Ratio
I
C
=10mA, V
CE
=2V*
I
C
=0.5A, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=4A, V
CE
=2V*
I
C
=20A, V
CE
=2V*
MHz
pF
ns
ns
V
CB
=10V, f=1MHz
I
C
=4A, I
B
=40mA, V
CC
=10V
I
C
=4A, I
B
=±40mA, V
CC
=10V
I
C
=50mA, V
CE
=10V
f=50MHz
h
FE
Singe Pulse Test T
amb
= 25°C
250
300
300
200
35
430
450
450
350
70
1200
10
1
0.1
Transition Frequency
f
T
180
Output Capacitance
C
obo
45
60
DC
1s
100ms
10ms
1ms
100
µ
s
0.1
0.1V
Turn - On Time
t
on
125
1V
10V
100V
Turn -Off Time
t
off
380
I
C
-Collector Current
V
BE
(on) v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZTX1049A
ZTX1049A
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
180
1.0
D=1(D.C)
160
t1
140
Am
120
tp
D=t1
0.75
tp
t
en
bi
100
D=0.5
m
te
0.50
C
B
80
E
D=0.2
e
ur
at
r
pe
60
D=0.1
D=0.05
40
0.25
ISSUE 1 JUNE 1995
FEATURES
* V
CEV
= 80V
* Very low saturation voltages
* High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight converters
* Emergency lighting
* DC-DC converters
20
Single Pulse
E-Line
TO92 Compatible
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
80
25
5
20
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
0.1ms
1ms
10ms
100ms
1s
10s
100s
Max Power Dissipation - (Watts)
0
ABSOLUTE MAXIMUM RATINGS.
-40
0
40
80
120
160
200
Pulse Width
T -Temperature
(°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX ZTX1049A Spice model Last revision 15/6/95
*
.MODEL ZTX1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100
+
ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+
ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007
+
+
CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36
VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9
*
*
*
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
©
1995 ZETEX PLC
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
These are supported by
agents and distributors in
major countries world-wide
©
Zetex plc 1997
Internet:
http://www.zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
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