BUZ20-E3046 datasheet, PDF - EEWORLD Datasheet

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BUZ20-E3046: DescriptionPower Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size155KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BUZ20-E3046 Overview

Power Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BUZ20-E3046 Parametric

Parameter Name	Attribute value
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	59 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	13.5 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	54 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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BUZ20-E3046 Related Products

	BUZ20-E3046	BUZ20-E3045	BUZ20-E3044
Description	Power Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN	Power Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Maker	Infineon	Infineon	Infineon
Parts packaging code	TO-220AB	TO-220AB	TO-220AB
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	59 mJ	59 mJ	59 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (ID)	13.5 A	13.5 A	13.5 A
Maximum drain-source on-resistance	0.2 Ω	0.2 Ω	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G3
Number of components	1	1	1
Number of terminals	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	54 A	54 A	54 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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