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BAS40-06LT1

Description
Rectifier Diode, Schottky, 40V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size42KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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BAS40-06LT1 Overview

Rectifier Diode, Schottky, 40V V(RRM),

BAS40-06LT1 Parametric

Parameter NameAttribute value
MakerLRC
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum operating temperature150 °C
Maximum repetitive peak reverse voltage40 V
surface mountYES
technologySCHOTTKY
LESHAN RADIO COMPANY, LTD.
Comon Anode
Schottky Barrier Diode
These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for
hand held and portable applications where
space is limited.
BAS40-06LT1
3
1
2
CASE 318–08
SOT–23 (TO–236AB)
* 40V SCHOTTKY BARRIER DIODES
CATHODE
1
CATHODE
2
Extremely Fast Switching Speed
Low Forward Voltage — 0.50 Volts (Typ)
@ I
F
= 10 mAdc
3
ANODE
Device Marking: L2
ORDERING INFORMATION
Device
BAS40-06HT1
Package
SOT–23
Shipping
3000/Tape & Reel
Preferred:
devices are recommended choices for future use and best overall value.
MAXIMUM RATINGS
(T
J
= 150°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Symbol
V
R
P
F
Value
40
225
1.8
T
J
, T
stg
–55 to +150
Unit
Volts
mW
mW/°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
40
Max
5.0
1.0
380
500
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
BAS40-06LT1–1/2
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