BC556 … BC559
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
These transistors are subdivided into three groups A, B
and C according to their current gain. the type BC556
is available in groups A and B, however, the types
BC557 and BC558 can be supplied in all three groups.
The BC559 is a low-noise type available in all three
groups. As complementary types, the NPN transistors
BC546…BC549 are recommended.
On special request, these transistors
manufactured in different pin configurations.
can
be
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25
o
C)
Symbol
Collector Base Voltage
ST BC556
ST BC557
ST BC558, ST BC559
Collector Emitter Voltage
ST BC556
ST BC557
ST BC558, ST BC559
Collector Emitter Voltage
ST BC556
ST BC557
ST BC558, ST BC559
Emitter Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
500
1)
Unit
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
O
O
-V
CBO
-V
CBO
-V
CBO
-V
CES
-V
CES
-V
CES
-V
CEO
-V
CEO
-V
CEO
-V
EBO
-I
C
-I
CM
-I
BM
I
EM
P
tot
T
j
T
S
150
-65 to +150
C
C
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
G S P FORM A IS AVAILABLE
BC556 … BC559
Characteristics at T
amb
=25
o
C
Symbol
h-Parameters at -V
CE
=5V, -I
C
=2mA, f=1kHz
Current Gain Group A
Current Gain
B
C
Current Gain Group A
Input lmpedance
B
C
Current Gain Group A
Output Admittance
B
C
Reverse Voltage Transfer Ratio Current Gain Group A
B
C
DC Current Gain
Current Gain Group A
at -V
CE
=5V, -I
C
=10µA
B
C
Current Gain Group A
at -V
CE
=5V, -I
C
=2mA
B
C
Current Gain Group A
at -V
CE
=5V, -I
C
=100mA
B
C
Collector Saturation Voltage
at -I
C
=10mA, -I
B
=0.5mA
at -I
C
=100mA, -I
B
=5mA
Base Saturation Voltage
at -I
C
=10mA, -I
B
=0.5mA
at -I
C
=100mA, -I
B
=5mA
Base Emitter Voltage
at -V
CE
=5V, -I
C
=2mA
at -V
CE
=5V, -I
C
=10mA
Collector Emitter Cutoff Current
at -V
CE
=80V
at -V
CE
=50V
at -V
CE
=30V
O
at -V
CE
=80V, T
j
=125 C
O
at -V
CE
=50V, T
j
=125 C
O
at -V
CE
=30V, T
j
=125 C
1)
Min.
-
-
-
1.6
3.2
6
-
-
-
-
-
-
-
-
-
110
200
420
-
-
-
-
-
-
-
600
-
-
-
-
-
-
-
-
Typ.
220
330
600
2.7
4.5
8.7
18
30
60
-4
1.5· 10
-4
2· 10
-4
3· 10
90
150
270
180
290
500
120
200
400
80
250
700
900
660
-
0.2
0.2
0.2
-
-
-
-
Max.
-
-
-
4.5
8.5
15
30
60
110
-
-
-
-
-
-
220
450
800
-
-
-
300
650
-
-
750
800
15
15
15
4
4
4
250
1)
Unit
-
-
-
kΩ
kΩ
kΩ
µS
µS
µS
-
-
-
-
-
-
-
-
-
-
-
-
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
K/W
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-V
CEsat
-V
CEsat
-V
BEsat
-V
BEsat
-V
BE
-V
BE
ST BC556
ST BC557
ST BC558, ST BC559
ST BC556
ST BC557
ST BC558, ST BC559
-I
CES
-I
CES
-I
CES
-I
CES
-I
CES
-I
CES
R
thA
Thermal Resistance Junction to Ambient Air
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BC556 … BC559
Characteristics at T
amb
=25
o
C
Symbol
Gain-Bandwidth Product
at -V
CE
=5V, -I
C
=10mA, f=100MHz
Collector-Base Capacitance
at -V
CB
=10V, f=1MHz
Noise Figure
at -V
CE
=5V, -I
C
=200µA, R
G
=2kΩ, f=1kHz,
∆f=200Hz
ST BC556, ST BC557, ST BC558
ST BC559
F
F
-
-
2
1
10
4
dB
dB
C
CBO
-
-
6
pF
f
T
-
150
-
MHz
Min.
Typ.
Max.
Unit
G S P FORM A IS AVAILABLE
京公网安备 11010802033920号
EEWORLD
