BZX79C2V4RL Series
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
This is a complete series of 500 mW Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead
hermetically sealed glass package that offers protection in all common
environmental conditions.
Specification Features:
http://onsemi.com
Cathode
Anode
•
Zener Voltage Range – 2.4 V to 33 V
•
ESD Rating of Class 3 (>16 KV) per Human Body Model
•
DO–204AH (DO–35) Package – Smaller than Conventional
DO–204AA Package
•
Double Slug Type Construction
•
Metallurgical Bonded Construction
Mechanical Characteristics:
CASE:
Double slug type, hermetically sealed glass
FINISH:
All external surfaces are corrosion resistant and leads are
AXIAL LEAD
CASE 299
GLASS
MARKING DIAGRAM
L
79C
xxx
YWW
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
(Note 1.)
Rating
Max. Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8″
Derate above 75°C
Operating and Storage
Temperature Range
Symbol
P
D
Value
500
4.0
T
J
, T
stg
–65 to
+200
Unit
mW
mW/°C
°C
L
= Assembly Location
79Cxxx = Device Code
=
(See Table Next Page)
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
BZX79CxxxRL
BZX79CxxxRL2*
Package
Axial Lead
Axial Lead
Shipping
5000/Tape & Reel
5000/Tape & Reel
1. Some part number series have lower JEDEC registered ratings.
* The “2” suffix refers to 26 mm tape spacing.
©
Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 1
Publication Order Number:
BZX79C2V4RL/D
BZX79C2V4RL Series
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless
otherwise noted, V
F
= 1.5 V Max @ I
F
= 100 mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
QV
BR
I
R
V
R
I
F
V
F
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Temperature Coefficient of V
BR
(Typical)
Reverse Leakage Current (T
A
= 25°C) @ V
R
Breakdown Voltage
Forward Current
Forward Voltage @ I
F
Capacitance (Typical)
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 100 mA for all types)
Zener Voltage
(Note 3.)
Device
(Note 2.)
BZX79C2V4RL
BZX79C2V7RL
BZX79C3V0RL
BZX79C3V3RL
BZX79C3V6RL
BZX79C3V9RL
BZX79C4V7RL
BZX79C5V1RL
BZX79C5V6RL
BZX79C6V2RL
BZX79C6V8RL
BZX79C7V5RL
BZX79C8V2RL
BZX79C10RL
BZX79C12RL
BZX79C15RL
BZX79C16RL
BZX79C18RL
BZX79C22RL
BZX79C24RL
BZX79C27RL
BZX79C30RL
BZX79C33RL
Device
Marking
79C2V4
79C2V7
79C3V0
79C3V3
79C3V6
79C3V9
79C4V7
79C5V1
79C5V6
79C6V2
79C6V8
79C7V5
79C8V2
79C10
79C12
79C15
79C16
79C18
79C22
79C24
79C27
79C30
79C33
V
Z
(Volts)
Min
2.28
2.57
2.85
3.14
3.42
3.71
4.47
4.85
5.32
5.89
6.46
7.13
7.79
9.5
11.4
14.25
15.2
17.1
20.9
22.8
25.65
28.5
31.35
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.7
5.1
5.6
6.2
6.8
7.5
8.2
10
12
15
16
18
22
24
27
30
33
Max
2.52
2.84
3.15
3.47
3.78
4.10
4.94
5.36
5.88
6.51
7.19
7.88
8.61
10.5
12.6
15.75
16.8
18.9
23.1
25.2
28.35
31.5
34.65
@ I
ZT
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Z
ZT
(Note 4.)
@ I
ZT
(f = 1.0 kHz)
W
100
100
95
95
90
90
80
60
40
10
15
15
15
20
25
30
40
45
55
70
80
80
80
Leakage Current
I
R
@ V
R
µA
100
75
50
25
15
10
3
2
1
3
2
1
0.7
0.2
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
Volts
1
1
1
1
1
1
2
2
2
4
4
5
5
7
8
10.5
11.2
12.6
15.4
16.8
18.9
21
23.1
QV
BR
mV/5C
Min
–3.5
–3.5
–3.5
–3.5
–3.5
–3.5
–3.5
–2.7
–2.0
0.4
1.2
2.5
3.2
4.5
6.0
9.2
10.4
12.9
16.4
18.4
–
–
–
Max
0
0
0
0
0
0.3
0.2
1.2
2.5
3.7
4.5
5.3
6.2
8.0
10
13
14
16
20
22
23.5
26
29
C
V
Z
= 0
0,
f = 1.0 MHz
pF
255
230
215
200
185
175
130
110
95
90
85
80
75
70
65
55
52
47
34
33
30
27
25
2.
TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation – the type numbers listed have zener voltage min/max limits as shown.
3.
REVERSE ZENER VOLTAGE (V
Z
) MEASUREMENT
Reverse zener voltage is measured under pulse conditions such that T
J
is no more than 2°C above T
A
.
4.
ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I
Z(ac)
=
0.1 I
Z(dc)
with the ac frequency = 1.0 kHz.
http://onsemi.com
2
BZX79C2V4RL Series
0.7
P
D
, STEADY STATE
POWER DISSIPATION (WATTS)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
200
HEAT
SINKS
3/8"
3/8"
T
L
, LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
http://onsemi.com
3
BZX79C2V4RL Series
θ
JL , JUNCTION TO LEAD THERMAL RESISTANCE (
°
C/W)
APPLICATION NOTE — ZENER VOLTAGE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
.
500
400
L
L
300
200
100
0
2.4-60 V
62-200 V
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
.
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
14
15
+25°C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL
=
θ
JL
P
D
.
∆V
=
θ
VZ
T
J
.
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
I R , LEAKAGE CURRENT (
µ
A)
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
+125°C
V
Z
, NOMINAL ZENER VOLTAGE (VOLTS)
Figure 3. Typical Leakage Current
http://onsemi.com
4
BZX79C2V4RL Series
TEMPERATURE COEFFICIENTS
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
+12
+10
+8
+6
+4
+2
0
-2
-4
2
3
4
5
6
7
8
9
V
Z
, ZENER VOLTAGE (VOLTS)
10
11
12
RANGE
V
Z
@ I
ZT
(NOTE 2)
100
70
50
30
20
10
7
5
3
2
1
10
20
30
50
V
Z
, ZENER VOLTAGE (VOLTS)
70
100
RANGE
V
Z
@ I
Z
(NOTE 2)
Figure 4a. Range for Units to 12 Volts
Figure 4b. Range for Units 12 to 100 Volts
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
θV
Z , TEMPERATURE COEFFICIENT (mV/
°C)
200
180
160
140
120
100
V
Z
@ I
ZT
(NOTE 2)
120
130
140
150
160
170
180
190
200
+6
+4
+2
0
-2
-4
V
Z
@ I
Z
T
A
= 25°C
20 mA
0.01 mA
1 mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE:
CHANGES IN ZENER CURRENT DO NOT
NOTE:
AFFECT TEMPERATURE COEFFICIENTS
3
4
5
6
7
8
V
Z
, ZENER VOLTAGE (VOLTS)
V
Z
, ZENER VOLTAGE (VOLTS)
Figure 4c. Range for Units 120 to 200 Volts
Figure 5. Effect of Zener Current
1000
500
C, CAPACITANCE (pF)
200
100
50
20
10
5
2
1
1
2
5
10
20
50% OF
V
Z
BIAS
0 V BIAS
T
A
= 25°C
100
70
50
C, CAPACITANCE (pF)
30
20
10
7
5
3
2
1
T
A
= 25°C
0 BIAS
1 V BIAS
1 VOLT BIAS
50% OF V
Z
BIAS
50
100
120
140
160
180
190
200
220
V
Z
, ZENER VOLTAGE (VOLTS)
V
Z
, ZENER VOLTAGE (VOLTS)
Figure 6a. Typical Capacitance 2.4–100 Volts
Figure 6b. Typical Capacitance 120–200 Volts
http://onsemi.com
5
京公网安备 11010802033920号
EEWORLD
