L/^ioaucti, LJnc.
20 STERN AVE.
SPRINGFIELD. NEW JERSEY 07081
U
'
SA
BLV36
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
VHP LINEAR PUSH-PULL POWER TRANSISTOR
Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier.
This device is primarily intended for use in linear VHP television transmitters and transposes (vision or
sound amplifier).
Features
Internally matched input for wideband operation and high power gain
Internal midpoint (RF ground) reduces negative feedback and improves power gain
Increased input and output impedance (compared with single-ended transistors) simplify wideband
matching
Length of external emitter leads is not critical
Diffused emitter balancing resistors for an optimum temperature profile
Gold metallization ensures excellent reliability
The envelope is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange.
QUICK REFERENCE DATA
RF performance in push-pull amplifier
mode of
operation
y,,g
f
A
MHz
224.25
P
L
T
h
°C
„
l
*
G
P
dB
> 11.0
typ. 13.0
nc
W
..
..
11b
%
> 48
typ. 55
gain
compression
dB
CW;
class-AB
28
2 x 0.25
<1.0*
* Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30%
sync input/25% sync output compression in television service (negative modulation, CCIR system).
MECHANICAL DATA
SOT161 (see Fig.1).
MECHANICAL DATA
Fig,1
SOT161.
17
16
Pinning
_
3
"* min *"
1
.*, -»-o 14
-o-
1 1 1—
'
(2y)
26 '
't
9 I
J
1,14
i
t
j
25
'
2
max
^L
\
5
.„.
'
16 *
i
t,
--
hi
'02
18
^
1,14
18,
42 -
~
ramlc
k
I
10,3
max
I
1
BdO
*
1 - Emitter
2 =
Emitter
3 = Collector (No.2)
4 = Base (No.2)
5 = Collector (No.1)
6 = Base (No.1)
7 - Emiiter
8 " Emitter
\
,'j
(2x)
t
7
1
d
•<
^\
„
•*-
10.2
-*i
,
2,54
1
i
4 ^n
4,05
|
4
7,5
max
|
n
3,35.- .
"N
"^irmtal
Torque on screw: min. 0.60 Nm
max. 0.75 Nm
Recommended screw: cheese-head 4-40 UNC/2A
Heatsink compound must be sparingly applied and evenly distributed.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
BLV36
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (peak value);
(peak value); V0£ = 0
V
CESM
open base
VCEO
Emitter-base voltage (open collector)
VEBO
Collector current per transistor section
DC or average
'C- 'C(AV)
(peak value); f> 1 MHz
'CM
Total DC power dissipation; T
m
b = 25 °C
p
tot(DC)
RF power dissipation
f>1 MHz;T
mb
= 25°C
p
tot(RF)
Storage temperature range
T
stg
Operating junction temperature
Ti
300
17
i
^
~\
max.
max.
max.
max.
max.
max.
65 V
33 V
4 V
8.5 A
17.5 A
218 W*
max.
270 W*
-65 to +150 °C
max.
200 °C
'c
I A)
ID
rib'
5°
\v
p
tot
(W)
\1
1
h-70°C
1
V
\
*
5
\
100
33
V
CE
(VI
40
80
2
10
(1) Second breakdown limit.
Fig.2 DC SOAR.
Conditions for Figs 2 and 3:
R
th mb-h = 0.25 K/W; Total device*.
THERMAL RESISTANCE
(dissipation = 180 W; T
mb
= 25 °C)* *
From junction to mounting base
(DC dissipation)
From junction to mounting base
(RF dissipation)
From mounting base to heatsink
I
II
III
Continuous DC operation
Continuous RF operation; (f > 1 MHz)
Short-time operation during mismatch;
(f > 1 MHz)
Fig.3 Power/temperature derating curves.
R
thj-mb(DC)
R
thj-mb(RF)
R
th
-
"
0.85 K/W
0.64 K/W
0.25 K/W
mb-h
Dissipation of either transistor section shall not exceed half rated power.
Both transistor sections equally loaded.
BLV36
CHARACTERISTICS
Apply to either transistor section unless otherwise specified. Tj = 25 °C.
Collector-emitter breakdown voltage
V
BE
=
°; lc
= 25mA
open base; IG= 100mA
Emitter-base breakdown voltage
open collector; IE = 10mA
Collector cut-off current
Vg
E
= 0; VQ
E
= 33 V
Second-breakdown energy; L = 25 mH; f = 50 Hz
DC current gain*
I
C
= 3.5A;V
C E
=25V
Transition frequency at f = 100 MHz*
-I
E
= 3.3 A;Vce
= 25 v
-I
E
= 10A;V
CB
= 25V
Collector capacitance at f = 1 MHz
l
E
= i
e
= 0;V
C
B = 25V
Feedback capacitance at f = 1 MHz
l
c
= 50mA;Vc
E
= 25V
Collector-flange capacitance
V
(BR)CES
V(BR)CEO
V
(BR)EBO
>
>
>
65 v
33 v
4 V
'CES
"^
>
10
mA
10 mJ
£
h
FE
™- ^
f
T
f
T
C
c
C
re
C
c
f
WP-
typ.
typ.
typ.
typ.
575 MHz
600 MHz
155 pF
88 pF
2 pF
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