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50A02S-E

Description
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon, PNP, SMCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size30KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

50A02S-E Overview

RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Silicon, PNP, SMCP, 3 PIN

50A02S-E Parametric

Parameter NameAttribute value
MakerSANYO
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.4 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)690 MHz
Ordering number : ENN7489
50A02S
PNP Epitaxial Planar Silicon Transistor
50A02S
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm
2106A
[50A02S]
Low-frequency Amplifier, high-speed switching,
small motor drive, muting circuit.
Features
0.5 0.5
1.6
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a glass epoxy board (20!30!1.6mm)
Conditions
Ratings
--50
--50
--5
--400
--800
200
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
Conditions
VCB=-
-40V, IE=0
VEB=-
-4V, IC=0
VCE=-
-2V, IC=--10mA
VCE=-
-10V, IC=--50mA
VCB=-
-10V, f=1MHz
IC=--100mA, IB=--10mA
IC=--100mA, IB=--10mA
200
690
3.8
-
-60
--0.9
--120
--1.2
Ratings
min
typ
max
--100
--100
500
MHz
pF
mV
V
Unit
nA
nA
Marking : XN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3103 TS IM TA-100638 No.7489-1/4
0.1max
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
0.3
0.75
0.6
0.4 0.8 0.4
1.6
3
0 to 0.1
1
2
0.2
0.1
Continued on next page.
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