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BC808-25

Description
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size184KB,3 Pages
ManufacturerGalaxy Microelectronics
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BC808-25 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,

BC808-25 Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Production specification
PNP General Purpose Amplifier
FEATURES
High collector current.
High current gain.
Low collector-emitter stauration voltage.
Complementary types:BC818.
BC808-16/-25/-40
Pb
Lead-free
SOT-23
ORDERING INFORMATION
Type No.
BC808-16
BC808-25
BC808-40
Marking
5E
5F
5G
Package Code
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
R
θjA
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Peak collector current
Base current
Peak base current
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Value
-30
-25
-5
-500
-1
-100
-200
330
417
-55 to +150
Unit
V
V
V
mA
A
mA
mA
mW
℃/W
C180
Rev.A
www.gmesemi.com
1

BC808-25 Related Products

BC808-25 BC808-40
Description Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon,
Maker Galaxy Microelectronics Galaxy Microelectronics
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 25 V 25 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 170
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz

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