BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1999, Power Innovations Limited, UK
MAY 1999 - REVISED SEPTEMBER 1999
G
Designed for Self Oscillating Inverter
Applications
Rugged 1500 V Planar Construction
Integral Free-Wheeling Anti-Parallel Diode
B
C
E
TO-220 PACKAGE
(TOP VIEW)
G
G
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
device symbol
C
B
E
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (I
B
= 0)
Collector-emitter voltage (V
BE
= 0)
Emitter-base voltage (I
C
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current (see Note 1)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTE
1: This value applies for t
p
=
10 ms, duty cycle
≤
2%.
SYMBOL
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
T
L
VALUE
700
1500
11
2
2.5
2
2.5
50
-55 to +125
-55 to +150
300
UNIT
V
V
V
A
A
A
A
W
°C
°C
°C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
electrical characteristics at 25°C case temperature
PARAMETER
V
CEO
V
CBO
V
EBO
I
CEO
I
CES
I
EBO
Collector-emitter
voltage
Collector-base
voltage
Emitter-base
voltage
Collector cut-off
current
Collector-emitter
cut-off current
Emitter cut-off
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
transfer ratio
I
C
=
I
C
=
I
EB
=
1 mA
100 µA
1 mA
I
B
= 0
V
BE
= 0
I
C
= 0
I
C
= 500 mA
I
C
= 1 A
I
C
= 2 A
I
C
= 250 mA
I
C
= 500 mA
I
C
=
10 mA
(see Notes 2 and 3)
I
C
= 100 mA
I
C
= 250 mA
I
C
= 500 mA
(see Notes 2 and 3)
10
10
10
7
0.3
0.7
21
25
25
18
(see Notes 2 and 3)
TEST CONDITIONS
MIN
700
1500
11
100
100
1
1.0
1.1
1.2
1.2
3.0
V
V
TYP
MAX
UNIT
V
V
V
µA
µA
mA
V
CE
= 700 V
V
CE
= 1500 V
V
EB
= 11 V
I
B
= 100 mA
I
B
= 100 mA
I
B
= 400 mA
I
B
=
50 mA
I
B
= 100 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
BE(sat)
V
CE(sat)
h
FE
NOTES: 2. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
θ
JA
R
θ
JC
Junction to free air thermal resistance
Junction to case thermal resistance
MIN
TYP
MAX
62.5
2
UNIT
°C/W
°C/W
resistive switching characteristics at 25°C case temperature
PARAMETER
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
I
C
= 500 mA
V
CC
= 125 V
I
B(on)
= 50 mA
I
B(off)
= 250 mA
t
p
= 300 µs
Duty cycle = 2%
TEST CONDITIONS
MIN
TYP
0.1
0.6
1.0
0.2
MAX
UNIT
µs
µs
µs
µs
PRODUCT
INFORMATION
2
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
100
V
CE
= 5 V
h
FE
- Forward Current Transfer Ratio
T
C
= 125°C
T
C
= 25°C
T
C
= 0°C
R3636CHF
10
1·0
0·01
0·1
1·0
10
I
C
- Collector Current - A
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
R3636CFB
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
3
R3636CRB
T
C
= 25°C
I
B(on)
= I
C
/ 10
V
BE(off)
= -5 V
T
C
= 25°C
I
C
- Collector Current - A
2
I
C
- Collector Current - A
1·0
0·1
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
DC Operation
0·01
1·0
10
100
1000
1
0
0
200
400
600
800
1000 1200 1400 1600
V
CE
- Collector-Emitter Voltage - V
V
CE
- Collector-Emitter Voltage - V
Figure 2.
Figure 3.
PRODUCT
INFORMATION
3
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,32
14,55
1,32
1,23
18,0 TYP.
6,1
5,6
0,97
0,66
1
2
3
1,47
1,07
14,1
12,7
2,74
2,34
5,28
4,68
2,90
2,40
0,64
0,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE
A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
INFORMATION
4
BUPD1520
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
MAY 1999 - REVISED SEPTEMBER 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1999, Power Innovations Limited
PRODUCT
INFORMATION
5
京公网安备 11010802033920号
EEWORLD
