BUR21 datasheet, PDF - EEWORLD Datasheet

BUR21: DescriptionPower Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size41KB，1 Pages; ManufacturerCrimson Semiconductor Inc.

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BUR21 Overview

Power Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

Parameter Name	Attribute value
Maker	Crimson Semiconductor Inc.
Reach Compliance Code	unknown
Other features	VERY LOW LEAKAGE
Maximum collector current (IC)	40 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	250 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
VCEsat-Max	1.5 V

This Material Copyrighted By Its Respective Manufacturer

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