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BC856ALT1 Series
Preferred Devices
General Purpose
Transistors
PNP Silicon
Features
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•
Pb−Free Packages are Available
COLLECTOR
3
1
BASE
Unit
V
2
EMITTER
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Symbol
V
CEO
Value
−65
−45
−30
−80
−50
−30
−5.0
−100
Collector-Base Voltage
V
CBO
V
1
V
mAdc
2
3
Emitter−Base Voltage
Collector Current
−
Continuous
V
EBO
I
C
Symbol
P
D
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
R
qJA
P
D
xx M
G
G
1
xx
M
G
= Device Code
xx = (Refer to page 5)
= Date Code*
= Pb−Free Package
300
2.4
417
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2008
December, 2008
−
Rev. 10
1
Publication Order Number:
BC856ALT1/D
BC856ALT1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA)
Collector
−Emitter
Breakdown Voltage
(I
C
=
−10
mA,
V
EB
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
=
−1.0
mA)
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
BC856 Series
BC857 Series
BC858, BC859 Series
V
(BR)CEO
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
125
220
420
V
CE(sat)
−
−
−
−
−0.6
−
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
90
150
270
180
290
520
−
−
−0.7
−0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−4.0
−
−
−
250
475
800
V
−0.3
−0.65
V
−
−
V
−0.75
−0.82
−
4.5
MHz
pF
dB
−
−
−
−
10
4.0
V
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
V
(BR)CBO
V
V
(BR)EBO
V
Collector Cutoff Current (V
CB
=
−30
V)
Collector Cutoff Current
(V
CB
=
−30
V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−10
mA,
V
CE
=
−5.0
V)
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
I
CBO
nA
mA
−
h
FE
Collector
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
Saturation Voltage
(I
C
=
−10
mA, I
B
=
−0.5
mA)
(I
C
=
−100
mA, I
B
=
−5.0
mA)
Base
−Emitter
On Voltage
(I
C
=
−2.0
mA, V
CE
=
−5.0
V)
(I
C
=
−10
mA, V
CE
=
−5.0
V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
=
−10
mA, V
CE
=
−5.0
Vdc, f = 100 MHz)
Output Capacitance
(V
CB
=
−10
V, f = 1.0 MHz)
Noise Figure
(I
C
=
−0.2
mA, V
CE
=
−5.0
Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
V
BE(sat)
V
BE(on)
f
T
C
ob
NF
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2
BC856ALT1 Series
BC857/BC858/BC859
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
-1.6
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-1.2
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
I
C
= -100 mA
-0.8
-0.4
I
C
= -20 mA
0
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 3. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
C
ib
7.0
T
A
= 25°C
C, CAPACITANCE (pF)
5.0
C
ob
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10 V
T
A
= 25°C
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain
−
Bandwidth Product
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3
BC856ALT1 Series
BC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= -5.0 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
J
= 25°C
-0.8
V
BE(sat)
@ I
C
/I
B
= 10
-0.6
V
BE
@ V
CE
= -5.0 V
-0.4
-0.2
0.2
0
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.6
I
C
=
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.4
-1.2
-1.8
q
VB
for V
BE
-55°C to 125°C
-0.8
-2.2
-0.4
T
J
= 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
I
B
, BASE CURRENT (mA)
-5.0
-10
-20
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mA)
-100 -200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= -5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
ob
20
-0.5
-1.0 -2.0
-5.0 -10 -20
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current−Gain
−
Bandwidth Product
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