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BTS130E3045A

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size333KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BTS130E3045A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

BTS130E3045A Parametric

Parameter NameAttribute value
MakerInfineon
Reach Compliance Codeunknown
ECCN codeEAR99
FET technologyMETAL-OXIDE SEMICONDUCTOR
Polarity/channel typeN-CHANNEL
TEMPFET
®
BTS 130
Features
q
q
q
q
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab
1
2
3
Pin
1
G
2
D
3
S
Type
BTS 130
V
DS
50 V
I
D
27 A
R
DS(on)
0.05
Package
TO-220AB
Ordering Code
C67078-A5001-A3
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source peak voltage, aperiodic
Continuous drain current,
T
C
= 25
°C
ISO drain current
T
C
= 85
°C,
V
GS
= 10 V,
V
DS
= 0.5 V
Pulsed drain current,
Short circuit current,
Symbol
Values
50
50
±
20
27
7.5
108
80
1200
75
– 55 ... + 150
E
55/150/56
K/W
1.67
75
°C
W
A
Unit
V
V
DS
V
DGR
V
gs
I
D
I
D-ISO
I
D puls
I
SC
P
SCmax
P
tot
T
j
,
T
stg
T
C
= 25° C
T
j
= – 55 ... + 150
°
C
Short circuit dissipation,
T
j
= – 55 ... + 150
°C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
R
th JC
R
th JA
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1
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