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BC848ALT3

Description
100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size369KB,24 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC848ALT3 Overview

100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN

BC848ALT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeCASE 318-08
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
1
BASE
COLLECTOR
3
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
BC850BLT1,CLT1
2
EMITTER
BC846, BC847 and BC848 are
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
BC846
65
80
6.0
100
BC847
BC850
45
50
6.0
100
BC848
BC849
30
30
5.0
100
Unit
V
V
V
mAdc
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Symbol
PD
225
1.8
R
q
JA
PD
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10
µA,
VEB = 0)
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
Collector – Base Breakdown Voltage
(IC = 10
m
A)
Emitter – Base Breakdown Voltage
(IE = 1.0
m
A)
BC846A,B
BC847A,B,C, BC850B,C
BC848A,B,C, BC849B,C
BC846A,B
BC847A,B,C
BC848A,B,C, BC849B,C, BC850B,C
V(BR)CEO
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
15
5.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred
devices are Motorola recommended choices for future use and best overall value.
ICBO
nA
µA
REV 1
2–146
Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC848ALT3 Related Products

BC848ALT3 BC850BLT3 BC850CLT3
Description 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Manufacturer packaging code CASE 318-08 CASE 318-08 CASE 318-08
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 110 200 420
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 240 240
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 30
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
Is it lead-free? - Contains lead Contains lead
Maximum operating temperature - 150 °C 150 °C
Base Number Matches - 1 1

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