BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
•
These are Pb−Free Devices*
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COLLECTOR
2
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC637
BC639
BC637
BC639
Symbol
V
CEO
Value
60
80
60
80
5.0
1.0
625
5.0
800
12
−55
to +150
Unit
Vdc
1
EMITTER
3
BASE
Collector - Base Voltage
V
CBO
Vdc
Emitter - Base Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
Adc
mW
mW/°C
mW
mW/°C
°C
TO−92
CASE 29
STYLE 14
12
1
2
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC
63x
AYWW
G
G
BC63
9−16
AYWW
G
G
x
= 7 or 9
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
February, 2011
−
Rev. 1
1
Publication Order Number:
BC637/D
BC637, BC639, BC639−16
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−
Emitter Breakdown Voltage (Note 1)
(I
C
= 10
mAdc,
I
B
= 0)
Collector
−
Emitter Zero−Gate Breakdown Voltage(Note 1)
(I
C
= 100
mAdc,
I
B
= 0)
Collector
−
Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter
−
Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
(V
CB
= 30 Vdc, I
E
= 0, T
A
= 125°C)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 5.0 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 500 mA, V
CE
= 2.0 V)
Collector
−
Emitter Saturation Voltage
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base
−
Emitter On Voltage
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain
−
Bandwidth Product
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle 2.0%.
f
T
C
ob
C
ib
−
−
−
200
7.0
50
−
−
−
MHz
pF
pF
h
FE
BC637
BC639
BC639−16ZLT1
V
CE(sat)
V
BE(on)
25
40
40
100
25
−
−
−
−
−
−
−
−
−
−
160
160
250
−
0.5
1.0
−
BC637
BC639
BC639−16
BC637
BC639
V
(BR)CEO
60
80
120
60
80
5.0
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Symbol
Min
Typ
Max
Unit
V
(BR)CES
V
(BR)CBO
Vdc
Vdc
V
(BR)EBO
I
CBO
Vdc
−
−
−
−
100
10
nAdc
mAdc
Vdc
Vdc
ORDERING INFORMATION
Device
BC637G
BC637RL1G
BC639G
BC639RL1G
BC639ZL1G
BC639−16ZL1G
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
2000 / Tape & Reel
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Box
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
BC637, BC639, BC639−16
1000
500
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10
5
2
1
1
P
D
T
A
25°C
P
D
T
C
25°C
BC635
BC637
BC639
100
P
D
T
C
25°C
P
D
T
A
25°C
SOA = 1S
hFE, DC CURRENT GAIN
200
500
V
CE
= 2 V
100
50
2
3 4 5
7 10
20 30 40 50 70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20
1
3
5
10
30 50 100
I
C
, COLLECTOR CURRENT (mA)
300 500
1000
Figure 1. Active Region Safe Operating Area
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 2. DC Current Gain
500
300
V, VOLTAGE (VOLTS)
1
0.8
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 2 V
V
CE
= 2 V
100
0.6
0.4
50
0.2
V
CE(sat)
@ I
C
/I
B
= 10
20
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
0
1
10
100
I
C
, COLLECTOR CURRENT (mA)
1000
Figure 3. Current−Gain — Bandwidth Product
Figure 4. “Saturation” and “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
-0.2
-1.0
V
CE
= 2 VOLTS
DT
= 0°C to +100°C
q
V
for V
BE
-2.2
1
3
5
10
30 50
100
I
C
, COLLECTOR CURRENT (mA)
300 500
1000
-1.6
Figure 5. Temperature Coefficients
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3
BC637, BC639, BC639−16
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
K
X X
H
V
1
D
G
J
C
N
N
SECTION X−X
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
---
2.04
2.66
1.50
4.00
2.93
---
3.43
---
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
K
G
X X
V
1
D
J
C
N
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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4
BC637/D
Microcontroller MCU
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