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BU406BU

Description
TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size92KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BU406BU Overview

TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BU406BU Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)7 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
BU406, BU407
NPN Power Transistors
These devices are high voltage, high speed transistors for horizontal
deflection output stages of TV’s and CRT’s.
Features
High Voltage
Fast Switching Speed
Low Saturation Voltage
These Devices are Pb−Free and are RoHS Compliant*
http://onsemi.com
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak Repetitive
Collector Current
Peak (10 ms)
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Storage
BU406
BU407
BU406
BU407
BU406
BU407
Symbol
V
CEO
V
CEV
V
CBO
V
EBO
I
C
I
CM
I
B
P
D
T
J
, T
stg
Value
200
150
400
330
400
330
6
7
10
15
4
60
0.48
−65
to 150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
_C
NPN SILICON
POWER TRANSISTORS
7 AMPERES
60 WATTS
150 AND 200 VOLTS
SCHEMATIC
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BU40xG
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.08
70
260
Unit
_C/W
_C/W
_C
1
BU40x = Specific Device Code
x = 6 or 7
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
BU406G
BU407G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
©
Semiconductor Components Industries, LLC, 2013
August, 2013
Rev. 10
1
Publication Order Number:
BU406/D
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