BU522BBD datasheet, PDF - EEWORLD Datasheet

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BU522BBD: DescriptionTRANSISTOR 7 A, 425 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size346KB，60 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BU522BBD Overview

TRANSISTOR 7 A, 425 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BU522BBD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-220AB
package instruction	PLASTIC, TO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	425 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	250
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	7.5 MHz

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

High Voltage Silicon Power

Darlingtons

Power Transistor mainly intended for use as ignition circuit output transistor.

•

Specified minimum sustaining voltage:

VCER(sus) = 425 V at IC = 1 A

•

High S.O.A. capability:

VCE = 400 V

•

Low VCE(sat) = 2.0 V max. at IC = 4 A

BU522B

7 AMPERES

DARLINGTON

POWER TRANSISTORS

NPN SILICON

450 VOLTS

75 WATTS

PD , POWER DISSIPATION (W)

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MAXIMUM RATINGS

Rating

Symbol

BU522B

425

450

475

5.0

7.0

2.0

Unit

Vdc

Adc

Collector–Emitter Voltage Sust.

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

VCER(sus)

VCER

VCBO

VEBO

Collector Current Continuous

Base Current

Total Device Dissipation @ TC = 25

Derate above 25

Operating and Storage Junction

Temperature Range

0.60

Watts

TJ, Tstg

– 65 to 150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max.

1.67

Unit

Thermal Resistance, Junction to Case

C/W

100

120

TC, CASE TEMPERATURE (°C)

140

160

Figure 1. Power Derating

REV 7

3–246

Motorola Bipolar Power Transistor Device Data

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