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Doc. No. 5SYA 1617-02 July 03
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+LJKO\ UXJJHG 637 GHVLJQ
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/DUJH IURQW ERQGDEOH DUHD
0D[LPXP UDWHG YDOXHV
3DUDPHWHU
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
6\PERO &RQGLWLRQV
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 900 V, V
CEM
≤
1200 V
V
GE
≤
15 V, T
vj
≤
125 °C
-40
Limited by T
vjmax
-20
V
GE
= 0 V, T
vj
≥
25 °C
PLQ
PD[
1200
75
150
20
10
150
8QLW
V
A
A
V
µs
°C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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Collector (-emitter)
breakdown voltage
Collector-emitter
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Internal gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
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V
(BR)CES
V
CE sat
I
CES
I
GES
V
GE(TO)
Q
ge
C
ies
C
oes
C
res
R
Gint
t
d(on)
t
r
t
d(off)
t
f
V
CC
= 600 V, I
C
= 75 A,
R
G
= 15
Ω,
V
GE
=
±15
V,
L
σ
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 75 A,
R
G
= 15
Ω,
V
GE
=
±15
V,
L
σ
= 60 nH,
inductive load
V
CC
= 600 V, I
C
= 75 A,
V
GE
= ±15 V, R
G
= 15
Ω,
L
σ
= 60 nH,
inductive load,
FWD: 5SLX12F1200
V
CC
= 600 V, I
C
= 75 A,
V
GE
= ±15 V, R
G
= 15
Ω,
L
σ
= 60 nH,
inductive load
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz,
T
vj
= 25 °C
V
GE
= 0 V, I
C
= 1 mA, T
vj
= 25 °C
I
C
= 75 A, V
GE
= 15 V
V
CE
= 1200 V, V
GE
= 0 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
-200
4.5
950
6.70
0.48
0.31
5
190
210
65
65
560
620
40
50
7.2
mJ
10
5
mJ
7.7
420
A
Ω
ns
ns
ns
ns
nF
300
200
6.5
PLQ
1200
1.7
1.9
2.1
100
2.3
W\S
PD[
8QLW
V
V
V
µA
µA
nA
V
nC
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
I
C
= 3 mA, V
CE
= V
GE
, T
vj
= 25 °C
I
C
= 75 A, V
CE
= 600 V, V
GE
= -15 ..15 V
Turn-on switching energy
E
on
Turn-off switching energy
E
off
Short circuit current
I
SC
t
psc
V 9
GE
= 15 V, T
vj
= 125 °C,
V
CC
= 900 V, V
CEM
9
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Doc. No. 5SYA 1617-02 July 03
page 2 of 5
60; .
0HFKDQLFDO SURSHUWLHV
3DUDPHWHU
Overall die L
x
W
Dimensions
exposed
L
x
W (except gate pad)
front metal
gate pad
thickness
Metallization
1)
8QLW
11.0
x
11.0
9.5
x
9.5
1.2
x
1.2
130 ± 20
AISi1
AI / Ti / Ni / Ag
4
1.8
mm
mm
mm
µm
µm
µm
L
x
W
front
back
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors,
Doc. No. 5SYA2033-01 April 02.
2XWOLQH GUDZLQJ
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Emitter
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Doc. No. 5SYA 1617-02 July 03
page 3 of 5
60; .
150
150
V
CE
= 20 V
125
25 °C
100
125 °C
125
100
I
C
[A]
I
C
[A]
75
75
50
50
125 °C
25 °C
25
V
GE
= 15 V
0
0
1
2
V
CE
[V]
3
4
5
25
0
0
1
2
3
4
5
6
7
8
9
10 11 12
V
GE
[V]
)LJ
Typical onstate characteristics
)LJ
Typical transfer characteristics
0.040
V
CC
= 600 V
R
G
= 15 ohm
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
0.040
V
CC
= 600 V
I
C
= 75 A
V
GE
= ±15 V
T
vj
= 125 °C
L
σ
= 60 nH
E
on
0.035
0.035
0.030
0.030
0.025
E
on
, E
off
[J]
E
on
, E
off
[J]
E
on
E
off
0.025
0.020
0.020
0.015
0.015
E
off
0.010
0.010
0.005
0.005
0.000
0
25
50
75
100
I
C
[A]
125
150
175
0.000
0
15
30
45
60
75
R
G
[ohm]
90
105
120
)LJ
Typical switching characteristics vs
collector current
)LJ
Typical switching characteristics vs
gate resistor
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Doc. No. 5SYA 1617-02 July 03
page 4 of 5
60; .
20
V
CC
= 600 V
10
C
ies
15
V
CC
= 800 V
V
GE
[V]
C [nF]
V
GE
= 0 V
f
OSC
= 1 MHz
V
OSC
= 50 mV
1
C
oes
10
C
res
5
I
C
= 75 A
T
vj
= 25 °C
0
0.0
0.2
0.4
Q
g
[µC]
0.6
0.8
0.1
0
5
10
15
20
V
CE
[V]
25
30
35
)LJ
Typical gate charge characteristics
)LJ
Typical capacitances vs
collector-emitter voltage
This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
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Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA 1617-02 July 03
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