Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1104 & SHF1104SMS
thru
SHF1109 & SHF1109SMS
1 AMP
400 - 900 V
Hyper Fast Rectifier
Features:
•
•
•
•
•
•
•
Hyper Fast Recovery: 40 nsec maximum
PIV to 900 Volts, Consult Factory
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Replaces UES 1104, UES1106, IN6624
TX, TXV, S Level screening Available
2/
DESIGNER’S DATA SHEET
Part Number/Ordering Information
1/
SHF11 __ __ __
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
Family/Voltage
04 = 400 V
06 = 600 V
08 = 800 V
09 = 900 V
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, T
A
= 25
°C
)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
= 25
°C
)
Operating & Storage Temperature
Maximum Thermal Resistance
SHF1104
SHF1106
SHF1108
SHF1109
V
RRM
V
RSM
V
R
Io
I
FSM
T
OP
& T
STG
400
600
800
900
1.0
20
-65 to +175
35
28
Axial Lead Diode
Volts
Amps
Amps
ºC
ºC/W
SMS
Junction to Leads, L = 3/8
Junction to Tabs
R
θJE
NOTES:
1/
For Ordering Information, Price, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0111F
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1104 & SHF1104SMS
thru
SHF1109 & SHF1109SMS
Symbol
Max
Units
Electrical Characteristic
Instantaneous Forward Voltage Drop
(I
F
= 1A
DC
, T
A
= 25ºC pulsed)
Instantaneous Forward Voltage Drop
(I
F
= 1A
DC
, T
A
= -55ºC pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 25ºC pulsed)
Reverse Leakage Current
(Rated V
R
, T
A
= 100ºC pulsed)
Reverse Recovery Time
(I
F
= 500mA, I
R
= 1A, I
RR
= 250mA, T
A
= 25ºC)
Junction Capacitance
(V
R
=10V
DC
, T
A
=25ºC, f=1MHz)
Case Outline:
(Axial)
V
F
V
F
1.35
1.5
10
1
40
22
DIM
A
B
C
D
MIN
0.100”
0.130”
0.027”
1.00”
V
DC
V
DC
µA
mA
nsec
pF
MAX
0.130”
0.180”
0.033”
--
I
R
I
R
t
RR
C
J
D
B
D
ØC
ØA
Case Outline:
(SMS)
B
A
DIM
A
B
C
D
A
MIN
0.127”
0.180”
0.020”
0.002”
MAX
0.140”
0.230”
0.030”
--
C
D
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0111F
DOC
Microcontroller MCU
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