MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BF844/D
High Voltage Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
BF844
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
400
450
6.0
300
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100
µAdc,
VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
400
450
450
6.0
—
—
—
—
—
—
—
0.1
500
0.1
Vdc
Vdc
Vdc
Vdc
µAdc
nAdc
µAdc
v
300
m
s, Duty Cycle
v
2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
BF844
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
(IC = 100 mAdc, VCE = 10 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = 1.0 mAdc, IB = 0.1 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
hFE
40
50
45
20
VCE(sat)
—
—
—
VBE(sat)
—
0.4
0.5
0.75
0.75
Vdc
—
200
—
—
Vdc
—
DYNAMIC CHARACTERISTICS
High Frequency Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Turn–On Time
(VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc)
Turn–Off Time
(VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc)
1. Pulse Test: Pulse Width
|hfe|
Cob
Cib
ton
toff
1.0
—
—
—
—
—
6.0
110
0.6
10
pF
pF
µs
µs
v
300
m
s, Duty Cycle
v
2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BF844
160
140
hFE, DC CURRENT GAIN
120
100
80
60
40
–55°C
20
1.0
2.0
100
5.0
10
20
50
IC, COLLECTOR CURRENT (mA)
200 300
25°C
TA = 125°C
VCE = 10 V
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
0.4
IC = 1.0 mA
IC = 10 mA
IC = 50 mA
0.3
TA = 25°C
0.2
0.1
0
10
30
100
1.0 k 3.0 k
300
IB, BASE CURRENT (µA)
10 k
50 k
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
1000
1.0 ms
IC, COLLECTOR CURRENT (mA)
300
200
100
TA = 25°C
TC = 25°C
100
µs
0.8
V, VOLTAGE (VOLTS)
1.0 s
0.6
VBE(on) @ VCE = 10 V
0.4
20
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
VALID FOR DUTY CYCLE
≤
10%
2.0
10
20
50
100
5.0
VCE, COLLECTOR VOLTAGE (VOLTS)
200
500
0.2
VCE(sat) @ IC/IB = 10
2.0
0
0.1
0.3
1.0
30
3.0
10
IC, COLLECTOR CURRENT (mA)
100
300
1.0
1.0
Figure 3. On Voltages
Figure 4. Active Region Safe Operating Area
100
50
C, CAPACITANCE (pF)
20
10
5.0
2.0
1.0
0.3 0.5
TA = 25°C
f = 1.0 MHz
1.0
3.0
10
30
REVERSE BIAS (VOLTS)
100
300
Cob
|h fe |, SMALL–SIGNAL CURRENT GAIN
Cib
10
3.0
2.0
1.5
1.0
0.1
VCE = 10 V
f = 10 MHz
TA = 25°C
0.2 0.3
1.0
3.0
10
IC, COLLECTOR CURRENT (mA)
30
100
Figure 5. Capacitance
Figure 6. High Frequency Current Gain
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BF844
10
5.0
+9.7 V
PW = 50
µs
DUTY CYCLE = 2.0%
Vin
t, TIME (
µ
s)
2.0
1.0
0.5
VCC = 150 V
IC/IB = 10
TA = 25°C
VBE(off) = 4.0 Vdc
tr
td
50
100
Vin
RB
0
–4.0 V
VCC
RL
Vout
0.2
0.1
1.0
3.0
10
30
IC, COLLECTOR CURRENT (mA)
CS
≤
4.0 pF*
Figure 7. Turn–On Switching Times and Test Circuit
10
5.0
ts
t, TIME (
µ
s)
2.0
1.0
0.5
VCC = 150 V
IC/IB = 10
TA = 25°C
3.0
10
30
IC, COLLECTOR CURRENT (mA)
50
tf
–11.4 V
+10.7 V
Vin
PW = 50
µs
DUTY CYCLE = 2.0%
0.2
0.1
1.0
VCC
RL
100
Vin
RB
CS
≤
4.0 pF*
Vout
Figure 8. Turn–Off Switching Times and Test Circuit
* Total Shunt Capacitance or Test Jig and Connectors.
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BF844
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
A
R
P
SEATING
PLANE
B
F
L
K
D
X X
G
H
V
1
J
C
N
N
SECTION X–X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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