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BF844RLRM

Description
TRANSISTOR 300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size345KB,24 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BF844RLRM Overview

TRANSISTOR 300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal

BF844RLRM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)10000 ns
Maximum opening time (tons)600 ns
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistor
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
BF844
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
400
450
6.0
300
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 100
µAdc,
VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
400
450
450
6.0
0.1
500
0.1
Vdc
Vdc
Vdc
Vdc
µAdc
nAdc
µAdc
v
300
m
s, Duty Cycle
v
2.0%.
2–258
Motorola Small–Signal Transistors, FETs and Diodes Device Data

BF844RLRM Related Products

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Description TRANSISTOR 300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal 300mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN 300mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN 300mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN 300mA, 400V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 PLASTIC, TO-226AA, 3 PIN CYLINDRICAL, O-PBCY-T3 PLASTIC, TO-226AA, 3 PIN
Contacts 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20 20 20
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 225 225 225 225 225 225
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 10000 ns 10000 ns 10000 ns 10000 ns 10000 ns 10000 ns
Maximum opening time (tons) 600 ns 600 ns 600 ns 600 ns 600 ns 600 ns
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C
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