BFP490 datasheet, PDF - EEWORLD Datasheet

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BFP490: DescriptionRF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, L Band, Silicon, NPN, SCT595, 5 PIN; CategoryDiscrete semiconductor The transistor; File Size74KB，6 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BFP490 Overview

RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, L Band, Silicon, NPN, SCT595, 5 PIN

BFP490 Parametric

Parameter Name	Attribute value
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G5
Contacts	5
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	EMITTER
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	5 pF
Collector-emitter maximum voltage	4.5 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
highest frequency band	L BAND
JESD-30 code	R-PDSO-G5
JESD-609 code	e3
Number of components	1
Number of terminals	5
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	17500 MHz

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Application Note No. 050

Discrete & RF Semiconductors

M. Amni

S. Lau

A Power-Amplifier module at 1.9 GHz using

BFP450 and BFP490

This application note provides general information, print layout and list of used

components, circuit layout and measured data of a power amplifier module at

1.9GHz for 3V-systems using Siemens SIEGET BFP450 and BFP490. The circuit

offers a 1-dB compression point of 26dBm for a required input power of 7.5

dBm.

Data at 1.9 GHz, 3V pulsed at 10% duty cycle of period 33.3ms and

Input

power=7.5dBm:

Output power=26dBm / PAE=34.8% / Gain=18.5dB / Current=380mA

D1=BAV99

+3V

R5=27 Ohm

C11=10nF

R1=1.8k

C2=10nF

R2=47 Ohm

C5=10nF

C3=82pF

C8=100pF

R4=10 Ohm

TrL11

TrL5

TrL2

TrL4

TrL1

TrL3

C9=2.7pF

C1=5,6pF

Tr1=BFP450

C4=2.7pF

C10=1pF

C6=8.2pF

TrL6

TrL7

TrL9

TrL8

Tr2=BFP490

TrL10

TrL12

C7=10nF

R3=33 Ohm

R6=27 Ohm

C12=100pF

TrL13

C16=5.6pF

TrL14

TrL15

RFout

C15=1pF

C13=3.9pF C14=2.7pF

RFin

This power amplifier module operated at 1.9 GHz was realized by using microstrip lines as

RFC and matching components. It offers a very good 1dB compression point and sufficient

power for many wireless communication systems, e.g. DECT. Further improvement is

possible. Some hints are provided as follows:

The layout size can be reduced by using chip-coils instead of the microstrip lines like

TrL2 and TrL9.

♦

A better stabilization behaviour versus temperature and a reduction of DC current gain

distribution problems can be obtained if the resistive biasing circuit of the BFP450

transistor is replaced with Siemens active bias controller BCR400(W). For further

information, please refer to the application note AN014. However, Siemens’ BAV99 of

Semiconductor Group

Edition A01

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