BUL44G
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44G have an applications specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
Features
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•
Improved Efficiency Due to Low Base Drive Requirements:
POWER TRANSISTOR
2.0 AMPERES, 700 VOLTS,
40 AND 100 WATTS
High and Flat DC Current Gain h
FE
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
•
Full Characterization at 125°C
•
Tight Parametric Distributions are Consistent Lot−to−Lot
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
400
700
9.0
2.0
5.0
1.0
2.0
50
0.4
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
1
2
3
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
BUL44G
W
W/_C
_C
BUL44
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AY WW
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.5
62.5
260
Unit
_C/W
_C/W
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
ORDERING INFORMATION
Device
BUL44G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
April, 2010
−
Rev. 7
1
Publication Order Number:
BUL44/D
BUL44G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mA, L = 25 mH)
Collector Cutoff Current
(V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current (V
CE
= Rated V
CES
,
V
EB
= 0)
(V
CE
= 500 V, V
EB
= 0)
Emitter Cutoff Current
(V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(I
C
= 0.4 Adc, I
B
= 40 mAdc)
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 0.4 Adc, I
B
= 40 mAdc)
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
DC Current Gain
(I
C
= 0.2 Adc, V
CE
= 5.0 Vdc)
(I
C
= 0.4 Adc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 8.0 V)
(I
C
= 0.4 Adc
I
B1
= 40 mAdc
V
CC
= 300 V)
1.0
ms
3.0
ms
1.0
ms
3.0
ms
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
f
T
C
OB
C
IB
−
−
−
−
−
−
−
−
−
−
−
13
38
380
2.5
2.7
1.3
1.15
3.2
7.5
1.25
1.6
−
60
600
−
−
−
−
−
−
−
−
MHz
pF
pF
V
BE(sat)
−
−
−
−
−
−
14
−
12
12
8.0
7.0
10
0.85
0.92
0.20
0.20
0.25
0.25
−
32
20
20
14
13
22
1.1
1.25
0.5
0.5
0.6
0.6
34
−
−
−
−
−
−
Vdc
(T
C
= 125°C)
(T
C
= 125°C)
V
CEO(sus)
I
CEO
I
CES
400
−
−
−
−
−
−
−
−
−
−
−
−
100
100
500
100
100
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
I
EBO
mAdc
V
CE(sat)
(T
C
= 125°C)
(T
C
= 125°C)
h
FE
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
Vdc
−
Dynamic Saturation Voltage:
Determined 1.0
ms
and
3.0
ms
respectively after
rising I
B1
reaches 90%
of final I
B1
V
CE(dsat)
Vdc
(I
C
= 1.0 Adc
I
B1
= 0.2 Adc
V
CC
= 300 V)
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2
BUL44G
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 20
ms)
Turn−On Time
Turn−Off Time
Turn−On Time
Turn−Off Time
(I
C
= 0.4 Adc, I
B1
= 40 mAdc
I
B2
= 0.2 Adc, V
CC
= 300 V)
(I
C
= 0.4 Adc, I
B1
= 40 mAdc
I
B2
= 0.2 Adc, V
CC
= 300 V)
(I
C
= 1.0 Adc, I
B1
= 0.2 Adc
I
B1
= 0.5 Adc, V
CC
= 300 V)
(I
C
= 1.0 Adc, I
B1
= 0.2 Adc
I
B2
= 0.5 Adc, V
CC
= 300 V)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
t
on
t
off
t
on
t
off
−
−
−
−
−
−
−
−
40
40
1.5
2.0
85
85
1.75
2.10
100
−
2.5
−
150
−
2.5
−
ns
ms
ns
ms
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
(I
C
= 0.8 Adc, I
B1
= 160 mAdc
I
B2
= 160 mAdc)
(I
C
= 1.0 Adc, I
B1
= 0.2 Adc
I
B2
= 0.5 Adc)
(I
C
= 0.4 Adc, I
B1
= 40 mAdc
I
B2
= 0.2 Adc)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
t
fi
t
si
t
c
t
fi
t
si
t
c
t
fi
t
si
t
c
−
−
−
−
−
−
−
−
−
−
−
−
70
−
2.6
−
−
−
125
120
0.7
0.8
110
110
110
120
1.7
2.25
180
210
−
180
−
4.2
190
350
200
−
1.25
−
200
−
175
−
2.75
−
300
−
170
−
3.8
−
300
−
ns
ms
ns
ns
ms
ns
ns
ms
ns
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3
BUL44G
TYPICAL STATIC CHARACTERISTICS
100
V
CE
= 1 V
T
J
= 125°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
T
J
= 25°C
10
T
J
= 125°C
T
J
= 25°C
T
J
= - 20°C
100
V
CE
= 5 V
10
1.0
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
1.0
0.01
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain at 1 Volt
Figure 2. DC Current Gain at 5 Volts
2.0
T
J
= 25°C
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
10
I
C
/I
B
= 10
1.0
I
C
/I
B
= 5
1.0
2A
1.5 A
1A
0.4 A
I
C
= 0.2 A
0
1.0
10
100
I
B
, BASE CURRENT (mA)
0.1
T
J
= 25°C
T
J
= 125°C
1000
0.01
0.01
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.2
1.1
VBE , VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.01
T
J
= 125°C
I
C
/I
B
= 5
I
C
/I
B
= 10
0.1
1.0
10
T
J
= 25°C
1000
C
IB
T
J
= 25°C
f = 1 MHz
100
C
OB
10
1.0
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
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4
BUL44G
TYPICAL SWITCHING CHARACTERISTICS
(I
B2
= I
C
/2 for all switching)
300
250
200
t, TIME (
μ
s)
t, TIME (ns)
I
C
/I
B
= 10
150
I
C
/I
B
= 5
100
50
0
0.2
T
J
= 25°C
T
J
= 125°C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
C
, COLLECTOR CURRENT (AMPS)
1.8
2.0
I
B(off)
= I
C/2
V
CC
= 300 V
PW = 20
ms
6.0
5.0
4.0
3.0
2.0
1.0
0
0.2
I
C
/I
B
= 10
0.4
0.6 0.8
1.0
1.2
1.4
1.6
I
C
, COLLECTOR CURRENT (AMPS)
1.8
2.0
T
J
= 25°C
T
J
= 125°C
I
C
/I
B
= 5
I
B(off)
= I
C/2
V
CC
= 300 V
PW = 20
ms
Figure 7. Resistive Switching, t
on
Figure 8. Resistive Switching, t
off
2500
I
C
/I
B
= 5
2000
I
B(off)
= I
C/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
2.0
T
J
= 25°C
T
J
= 125°C
t si , STORAGE TIME (
μs)
1.5
I
C
= 1 A
I
B(off)
= I
C/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
t, TIME (ns)
1500
1000
1.0
500
0
0.4
T
J
= 25°C
T
J
= 125°C
0.8
I
C
= 0.4 A
I
C
/I
B
= 10
2.4
0.5
5.0
6.0
7.0
8.0
9.0
10
11
h
FE
, FORCED GAIN
12
13
14
15
1.2
1.6
2.0
I
C
, COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, t
si
Figure 10. Inductive Storage Time
250
200
I
B(off)
= I
C/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
t
c
200
t
c
150
t, TIME (ns)
t, TIME (ns)
150
t
fi
100
I
B(off)
= I
C/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
0.8
1.2
1.6
2.0
I
C
, COLLECTOR CURRENT (AMPS)
100
50
0
0.4
t
fi
T
J
= 25°C
T
J
= 125°C
2.4
50
0.4
T
J
= 25°C
T
J
= 125°C
0.8
1.2
1.6
2.0
I
C
, COLLECTOR CURRENT (AMPS)
2.4
Figure 11. Inductive Switching,
t
c
and t
fi
I
C
/I
B
= 5
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5
Figure 12. Inductive Switching,
t
c
and t
fi
I
C
/I
B
= 10
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