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BUL44AJ

Description
2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size180KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BUL44AJ Overview

2A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BUL44AJ Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)13 MHz
BUL44G
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL44G have an applications specific state−of−the−art die
designed for use in 220 V line operated Switchmode Power supplies
and electronic light ballasts.
Features
http://onsemi.com
Improved Efficiency Due to Low Base Drive Requirements:
POWER TRANSISTOR
2.0 AMPERES, 700 VOLTS,
40 AND 100 WATTS
High and Flat DC Current Gain h
FE
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Full Characterization at 125°C
Tight Parametric Distributions are Consistent Lot−to−Lot
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
400
700
9.0
2.0
5.0
1.0
2.0
50
0.4
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
1
2
3
TO−220AB
CASE 221A−09
STYLE 1
MARKING DIAGRAM
BUL44G
W
W/_C
_C
BUL44
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
AY WW
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
2.5
62.5
260
Unit
_C/W
_C/W
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
ORDERING INFORMATION
Device
BUL44G
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
April, 2010
Rev. 7
1
Publication Order Number:
BUL44/D
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