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BUL45D2BG

Description
5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size185KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
Download Datasheet Parametric View All

BUL45D2BG Overview

5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BUL45D2BG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresBUILT-IN ANTISATURATION NETWORK
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)13 MHz
BUL45G
NPN Silicon Power
Transistor
High Voltage SWITCHMODE Series
Designed for use in electronic ballast (light ballast) and in
SWITCHMODE Power supplies up to 50 W.
Features
http://onsemi.com
Improved Efficiency Due to:
Low Base Drive Requirements (High and Flat DC Current Gain h
FE
)
Low Power Losses (On-
-State and Switching Operations)
Fast Switching: t
fi
= 100 ns (typ) and t
si
= 3.2
ms
(typ)
@ I
C
= 2.0 A, I
B1
= I
B2
= 0.4 A
Full Characterization at 125C
Tight Parametric Distributions Consistent Lot--to--Lot
These Devices are Pb--Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector--Emitter Sustaining Voltage
Collector--Base Breakdown Voltage
Emitter--Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25C
Operating and Storage Temperature
-- Continuous
-- Peak (Note 1)
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
P
D
T
J
, T
stg
Value
400
700
9.0
5.0
10
2.0
75
0.6
--65 to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
POWER TRANSISTOR
5.0 AMPERES, 700 VOLTS,
35 AND 75 WATTS
TO-
-220AB
CASE 221A-
-09
STYLE 1
1
2
3
MARKING DIAGRAM
BUL45G
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction--to--Case
Thermal Resistance, Junction--to--Ambient
Symbol
R
θJC
R
θJA
Max
1.65
62.5
Unit
_C/W
_C/W
BUL45
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb--Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
ORDERING INFORMATION
Device
BUL45G
Package
TO--220
(Pb--Free)
Shipping
50 Units / Rail
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2011
October, 2011 - Rev. 9
-
1
Publication Order Number:
BUL45/D
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