V
CE
I
C
=
=
1200 V
150 A
IGBT Module
LoPak 4
5SNS0150V120000
TENTATIVE
Doc. No. 5 SYA-1509-00 June 99
•
•
•
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Low-loss, rugged IGBT
chip-set
Low EMI generating diode
Low profile compact
package
Drop-on bus bars and
snap-on PCB assembly
Integrated NTC case
temperature sensor
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
Isolation Voltage
Symbol
V
CES
I
C
I
CM
V
GES
Ptot
SwSOA
SCSOA
I
F
I
FM
V
iso
(T
j
= 25°C, unless specified otherwise)
Conditions
V
GE
= 0 V, Ic=1mA
T
hs
= 75°C
Pulse: tp=1ms, T
hs
= 75°C
Rating
1200 V
150 A
300 A
±20
V
T
hs
= 25°C , per switch
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 µs, V
GE
=
±
V, T
j
=125 °C
15
630 W
I
C
= 300 A, V
CEM
= 1200 V, V
CC
= 1000 V, V
GE
=
±
V, T
j
=125°C
15
T
hs
= 75°C
Pulse: tp = 1ms, T
hs
= 75°C
1 min, f = 50Hz
150 A
300 A
2500 V
The information presented here is to the best knowledge true and accurate. No warranty or guarantee, expressed or implied is
made regarding capacity, performance, or suitability. We reserve the right to change specifications without notice.
ABB Semiconductors AG
ABB Semiconductors AG
5SNS0150V120000
IGBT Characteristic Values
Parameter
Collector-Emitter Saturation
Voltage
Collector-Emi. Leakage Current
Gate-Emitter leakage Current
Gate-Emitter Threshold Voltage
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
I
CES
I
GES
V
GEth
Q
G
C
iss
C
oss
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
(T
j
=25 °C, unless other spec.)
Symbol
V
CE(sat)
Conditions
T
j
= 25 °C
I
C
= 150 A, V
GE
= 15 V
T
j
= 125 °C
min. typ.
2.5
2.8
max. Unit
2.8
V
V
15
±500
mA
nA
V
nC
nF
nF
nF
µs
µs
µs
µs
mJ
mJ
V
CE
= 1200 V, V
GE
= 0 V, T
j
= 125 °C
V
CE
= 0 V, V
GE
=
±20
V, T
j
= 125 °C
I
C
= 5 mA, V
CE
= V
GE
I
C
= 150 A, V
CE
= 600 V, V
GE
= -15 to 15 V
4.5
2000
12
V
CE
= 25 V, V
GE
= 0 V, F = 1MHz
1.70
1.00
I
C
= 150 A, V
CC
= 600 V, R
gon
= 5.6
Ω
,
T
j
= 125 °C, V
GE
=
±15
V
I
C
= 150 A, V
CC
= 600 V, R
goff
= 5.6
Ω
,
T
j
= 125 °C,V
GE
=
±15
V
R
gon
= 5.6
Ω
R
goff
= 5.6
Ω
I
C
= 150 A, T
j
= 125 °C,
V
CC
= 600 V, V
GE
=
±15
V,
inductive load
0.35
0.08
0.60
0.05
18.5
19.5
6.5
Diode Characteristic Values
Parameter
Forward Voltage
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Energy
(T
j
= 25 °C, unless other spec.)
Symbol
V
F
I
rrm
Q
rr
t
rr
I
F
= 150 A
Conditions
T
j
= 25 °C
T
j
= 125 °C
min.
typ. max.
2.00
2.10
130
2.30
Unit
V
A
µC
µs
mJ
I
F
= 150 A, R
gon
= 5.6
Ω,
V
CC
= 600 V, V
GE
=
±
V
15
I
F
= 150 A, T
j
= 125 °C, V
CC
= 600 V, R
gon
= 5.6 ,
V
GE
=
±
V, inductive load
15
23
0.30
8
E
rec
The information presented here is to the best knowledge true and accurate. No warranty or guarantee, expressed or implied is
made regarding capacity, performance, or suitability. We reserve the right to change specifications without notice.
Doc. No. 5 SYA-1509-00 June 99
page 2 of 4
ABB Semiconductors AG
5SNS0150V120000
Thermal Characteristics
Parameter
IGBT Ther. Res. Junct. to Heat.
(T
j
=25 °C, unless other spec.)
Symbol
R
th
j-h Igbt
Conditions
Heatsink flatness : < 50 µm, rough. < 6 µm,
without step
Thermal grease thickness:
30µm < t < 50 µm
min.
typ. max.
0.200
0.270
0.120
0.240
Unit
°C/W
°C/W
°C/W
°C/W
°C
°C
Diode Ther. Res. Junct. to Heat. R
th
j-h Diode
Equivalent IGBT Ther. Res.
Junct. to Case
Equivalent Diode Ther. Res.
Junct. to Case
Junction Temperature
Storage Temperature
Case Temperature sensor
R
th
j-c Igbt
R
th
j-c Diode
T
vj
T
tstg
/T
cop
NTC
- 40
- 40
150
125
Thermistor : R=5kΩ +/-3%@25°C, B-value (25°C/50°C): 3375K
Mechanical Properties
Parameter
Dimensions
Clearance Distance
Symbol
Conditions
Term. to base:
C to E:
Term. to base:
C to E:
min.
11
8
16
11
3
typ. max.
Unit
mm
mm
mm
mm
mm
L* W* H Typical , see outline drawing
D
C
acc. IEC 664-1 and
prEN50124-1:1995
acc. IEC 664-1 and
prEN50124-1:1995
123 * 106.5 * 34.5
Surface Creepage Distance
D
SC
Base to Heatsink
Main Terminals
Mounting
PCB mounting
Gate, Emitter Aux.
Weight
(M6) Hole 6.5mm diameter
M6 Bolts
Self tapping screw Hole
2.5mm diameter
Spring Pins
6
6
Nm
Nm
Nm
Nm
650
gr
The information presented here is to the best knowledge true and accurate. No warranty or guarantee, expressed or implied is
made regarding capacity, performance, or suitability. We reserve the right to change specifications without notice.
page 3 of 4
Doc. No. 5 SYA-1509-00 June 99
ABB Semiconductors AG
5SNS0150V120000
Electrical configuration
Outline drawing
The information presented here is to the best knowledge true and accurate. No warranty or guarantee, expressed or implied is
made regarding capacity, performance, or suitability. We reserve the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Doc. No. 5 SYA-1509-00 June 99
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