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5SNS0100W121100

Description
Insulated Gate Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size925KB,4 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SNS0100W121100 Overview

Insulated Gate Bipolar Transistor

5SNS0100W121100 Parametric

Parameter NameAttribute value
MakerABB
package instructionFLANGE MOUNT, R-PUFM-P39
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)100 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-P39
Number of components6
Number of terminals39
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)450 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)755 ns
Nominal on time (ton)225 ns
VCEsat-Max2.3 V
V
CE
I
C
=
=
1200 V
100 A
IGBT Module LoPak3 SPT
5SNS0100W121100
MARKETING INFORMATION
Doc. No. 5SYA1523-01 Aug. 00
Low-loss, rugged IGBT SPT
chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact package
Industry standard package
• •
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
Symbol
V
CES
I
C
I
CM
V
GES
Ptot
SwSOA
SCSOA
I
F
I
FM
(T
vj
= 25°C, unless specified otherwise)
Conditions
V
GE
shorted
T
hs
= 70°C
Pulse: tp=1ms, T
hs
= 70°C
T
hs
= 25°C per switch
I
C
= 200 A, V
CEM
= 1200 V, V
CC
1000 V,
V
GE
=
±15
V, T
vj
=125°C.
voltage measured on auxiliary terminals
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 µs,
V
GE
=
±15
V, T
vj
=125 °C
100
Pulse: tp = 1ms, T
hs
= 70°C
200
A
A
Values
1200
100
200
±20
450
Unit
V
A
A
V
W
ABB Semiconductors AG reserves the right to change specifications without notice.
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