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MT28C256532W18SBT-F705P70TTWT

Description
Memory Circuit, 8MX16, CMOS, PBGA88, LEAD FREE, FBGA-88
Categorystorage    storage   
File Size218KB,15 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT28C256532W18SBT-F705P70TTWT Overview

Memory Circuit, 8MX16, CMOS, PBGA88, LEAD FREE, FBGA-88

MT28C256532W18SBT-F705P70TTWT Parametric

Parameter NameAttribute value
MakerMicron Technology
Parts packaging codeBGA
package instructionLFBGA,
Contacts88
Reach Compliance Codeunknown
Other featuresCELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH
JESD-30 codeR-PBGA-B88
JESD-609 codee1
length12 mm
memory density134217728 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals88
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width9 mm
PRELIMINARY
256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
FLASH AND CellularRAM
COMBO MEMORY
Features
Stacked die Combo package
• Includes two 128Mb Flash devices
• Choice of either one 32Mb or one 64Mb
CellularRAM device
Basic configuration
Flash
• Flexible multibank architecture
• 8 Meg x 16 Async/Page/Burst interface
• Support for true concurrent operations with no
latency
CellularRAM
• Low-power, high-density design
• 2 Meg x 16 or 4 Meg x 16 configurations
• Async/Page
F_V
CC
, V
CC
Q, F_V
PP
, C_V
CC
voltages
• 1.70V (MIN)/1.95V (MAX) F_V
CC
, C_V
CC
• 1.70V (MIN)/2.24V (MAX) V
CC
Q
• 1.80V (TYP) F_V
PP
(in-system PROGRAM/ERASE)
• 12V ±5% (HV)
F_
V
PP
tolerant (factory
programming compatibility)
Fast programming Algorithm (FPA)
Enhanced suspend options
• ERASE-SUSPEND-to-READ within same bank
• PROGRAM-SUSPEND-to-READ within same
bank
• ERASE-SUSPEND-to-PROGRAM within same
bank
Each Flash contains two 64-bit chip protection
registers for security purposes
100,000 ERASE cycles per block
Cross-compatible command set support
• Extended command set
• Common Flash interface (CFI) compliant
MT28C256532W18S
MT28C256564W18S
Low Voltage, Wireless Temperature
Figure 1: 88-Ball FBGA
1
A
B
C
D
E
F
G
H
J
K
L
M
NC
2
NC
3
4
5
6
7
NC
8
NC
A4
A18
A19
C_V
SS
F_V
CC
F_V
CC
A21
A11
A5
C_LB#
A23
C_V
SS
NC
F_CLK
A22
A12
A3
A17
RFU
F_V
PP
C_WE#
C_CE#
A9
A13
A2
A7
RFU
F_WP#
F_ADV#
A20
A10
A15
A1
A6
C_UB#
F_RST#
F_WE#
A8
A14
A16
A0
DQ8
DQ2
DQ10
DQ5
DQ13
F_WAIT#
NC
C_OE#
DQ0
DQ1
DQ3
DQ12
DQ14
DQ7
NC
NC
F_OE#
DQ9
DQ11
DQ4
DQ6
DQ15
V
CC
Q
F_CE#
NC
NC
NC
C_V
CC
F_V
CC
V
CC
Q
C_ZZ#
C_V
SS
V
SS
Q
V
CC
Q
F_VCC
C_V
SS
V
SS
Q
F_V
SS
C_V
SS
NC
NC
NC
NC
Top View
(Ball Down)
NOTE:
Balls C6, E5, and G7 are only used for Flash burst operation.
Options
Flash Timing
• 60ns
1
• 70ns
Flash Burst Frequency
• 66 MHz
1
• 54 MHz
Flash Boot Block Configuration
• Top/Top
• Top/Bottom
• Bottom/Top
• Bottom/Bottom
CellularRAM Timing
• 70ns
• 85ns
I/O Voltage Range
• V
CC
Q 1.70V–2.24V
Operating Temperature Range
• Wireless Temperature (-25°C to +85°C)
Package
• 88-ball FBGA (Standard) 8 x 10 grid with eight
support balls
• 88-ball FBGA (Lead-free) 8 x 10 grid with eight
support balls
2
NOTE:
1. Contact factory for availability.
2. Contact factory for details.
09005aef80bcd58d
MT28C256564W18S.fm - Rev. D Pub 2/04 EN
1
©2004 Micron Technology, Inc. All rights reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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