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SK35A

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size163KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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SK35A Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC

SK35A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionGREEN, PLASTIC, SMA, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingPURE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage50 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current70 A
SK32A THRU SK3AA
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 V
Forward Current - 3 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Metal silicon junction, majority carrier conduction
• Built-in strain relief, ideal for automated placement
• For surface mount applications
• Low profile package
• Low power loss, high efficiency
• High current capability , Low forward voltage drop
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
Case:
SMA (DO-214AC) molded plastic body
Terminals:
solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, For
capacitive load, derate by 20%
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length
Peak Forward Surge Current, 8.3 ms Single Half-
sine-wave Superimposed on rated load (JEDEC
method)
Maximum Forward Voltage at 3 A DC
1)
Maximum Reverse Current
1)
at Rated DC Blocking Voltage
Typical Junction Capacitance
3)
Typical Thermal Resistance
2)
Operating Junction Temperature Range
Storage Temperature Range
1)
2)
Symbols
SK32A SK33A SK34A SK35A SK36A SK38A SK3AA
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
3
60
42
60
80
57
80
100
71
100
Units
V
V
V
A
I
FSM
V
F
I
R
C
J
R
θJA
R
θJL
T
J
T
S
- 65 to + 125
0.55
80
0.75
0.5
0.85
A
V
mA
T
A
= 25
O
C
T
A
= 100
O
C
20
250
88
28
10
160
O
pF
C/W
O
- 65 to + 150
- 65 to + 150
C
C
O
Pulse test: 300 µs pulse width, 1% duty cycle.
P.C.B. mounted with 0.55 X 0.55" (14 X 14 mm) copper pad areas.
3)
Measured at 1 MHz and applied reverse voltage of 4 V.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/04/2008
J

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SK35A SK32A SK33A SK34A SK36A SK38A SK3AA
Description 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AC 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AC 3 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AC 3 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AC 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC
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